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Metallization of GaN Thin Films Prepared by Ion Beam Assisted Molecular Beam Epitaxy

  • J. S. Chan (a1), T. C. Fu (a1), N. W. Cheung (a1), N. Newman (a1), X. Liu (a1), J. T. Ross (a1), M. D. Rubin (a1) and P. Chu (a1)...

Abstract

Gallium nitride has generated much interest due to its ability to emit light in the blue to UV range [1]. We have investigated the ohmic contact properties of various metals evaporated onto highly auto-doped n-type GaN thin films which were grown on basal sapphire substrates by ion-assisted molecular beam epitaxy (IAMBE). Electrical measurements of transmission line structures with the metals In, InSn and AuGeNi revealed a wide range of contact resistivity (10∼2 to 10-6 Ω-cm2) which changed with annealing.

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[1] Strite, S. and Morkoc, H., J. Vac. Sci. Technol. B, 10, 1237 (1992).
[2] Rubin, M., Newman, N., Chan, J.S., Fu, T.C. and Ross, J.T., Appl. Phys. Lett., 64, 64 (1994).
[3] Look, D.C., Electrical Characterization of GaAs Materials and Devices, 1st ed. (John Wiley and Sons, New York, 1989), pp. 132136.
[4] Chem, J.G.J. and Oldham, W.G., IEEE Elect. Dev. Lett., 5, 178 (1984).

Metallization of GaN Thin Films Prepared by Ion Beam Assisted Molecular Beam Epitaxy

  • J. S. Chan (a1), T. C. Fu (a1), N. W. Cheung (a1), N. Newman (a1), X. Liu (a1), J. T. Ross (a1), M. D. Rubin (a1) and P. Chu (a1)...

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