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Metallisation and Silicidation of Porous Silicon

Published online by Cambridge University Press:  22 February 2011

Bernard J. Aylett ,
Lyndsay G. Earwaker  and
John M. Keen
Bernard J. Aylett
Affiliation:
Dept. of Chemistry, Queen Mary and Westfield College, London El 4NS, U.K.
Lyndsay G. Earwaker
Affiliation:
Dept. of Physics and Space Research, University of Birmingham, U.K.
John M. Keen
Affiliation:
DRA-Royal Signals and Radar Establishment, Electronics Division, Malvern, U.K.
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Abstract

Thin films of cobalt, rhenium, or cobalt silicide have been deposited down the pores of porous silicon layers, using HCo(CO)4, HRe(CO)5, and SiH3Co(CO)4 as precursors in a Chemical Vapour Infiltration and Decomposition (CVID) technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 281
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Herino, R., Jan, P., and Bomchil, G., J. Electrochem. Soc., 132, 2513 (1985);Google Scholar
see also: Borisenko, V.E., Bondarenko, V.P., and Raiko, V.A., Doklady Akad. Nauk BSSR, 33 (6), 528 (1989) [Chem. Abstr., 111, 86175 (1989)].Google Scholar
2. Ito, T. and Hiraki, A., Jap. J. Appl Phys., 26, 1219 (1987);Google Scholar
Ito, T., Hiraki, A., and Satou, M., Appl. Surf. Sci., 33/34, 1127 (1988);Google Scholar
Ito, T., Kato, Y., Hiraki, A., and Shinku, M. Satou (J. Vacuum Soc. Japan), 31, 913 (1988);Google Scholar
Ito, T., Yamama, A., Hiraki, A., and Satou, M., Appl. Surf. Sci., 41/42, 301 (1989);Google Scholar
Yamaha, A., Ito, T., and Hiraki, A., Vacuum, 41, 1254 (1990).Google Scholar
3. Kao, Y.C., Wang, K.L., Wu, B.J., Lin, T.L., Nieh, C.W., Jamieson, D., and Bai, G., Appl. Phys. Letters, 51, 1809 (1987).Google Scholar
4. Codella, P.J., Adar, F., and Liu, Y.S., Appl. Phys. Letters, 46, 1076 (1985);Google Scholar
Tsao, S.S., Blewer, R.S., and Tsao, J.Y., Appl. Phys. Letters, 49, 403 (1986);Google Scholar
Tsao, S.S., Mat. Res. Soc. Symp. Proc., 107, 429 (1988).Google Scholar
See also: Earwaker, L.G., Briggs, M.C., Nasir, M.I., Farr, J.P.G., and Keen, J.M., Nucl. Instrum. Methods Phys. Res., Section B B56/B57 833 (1991).Google Scholar
5. Sternberg, H.W., Wender, I., and Orchin, M., Inorg. Synth., 5, 192 (1957)Google Scholar
6. Aylett, B.J. and Campbell, J.M., J. Chem. Soc. (A), (1969), 1910.Google Scholar
7. Baev, A.K., Gaidym, I.L, Zhur. Fiz. Khim., 48, 2429 (1974);Google Scholar
Syrkin, V.G., Prokorov, V.N., and Romanov, L.N., Zhur. Priklad. Khim., 49, 1301 (1976);Google Scholar
Bor, G. and Dietler, U.K., J. Organometal. Chem., 191, 295 (1980).Google Scholar
8. Gross, M.E., Kranz, K. Schnoes, Brasen, D., and Luftman, H., J. Vac. Sci. Technol. B6(5), 1548(1988).Google Scholar
9. Brandes, K.H. and Jonassen, H.B., Anorg, Z., Allgem. Chem., 343, 215 (1966);Google Scholar
Ungary, F. and Marko, L., J. Organometal. Chem., 20, 205 (1969)Google Scholar
10. Beck, W., Hieber, W., and Braun, G., Z Anorg. Allgem. Chem., 308, 23 (1961)Google Scholar
11. Aylett, B.J. and Colquhoun, H.M., J. Chem. Soc., Dalton Trans., (1977), 2058;Google Scholar
Ayletl, B.J. and Tannahill, A.A., Vacuum, 35, 435 (1985).Google Scholar
12. Ito, T., Kivama, H., Yasumatsu, T., Watabe, H., and Hiraki, A., Physica B (Amsterdam), 170, 535(1991)Google Scholar
13. Moore, E.J., Sullivan, J.M., and Norton, J.R., J. Amer. Chem. Soc., 108, 2257 (1986).Google Scholar
14. Aylett, B.J., Adv. Inorg. Chem. Radiochem., 25, 1 (1982);Google Scholar
Tiiley, T.D., in “The Chemistry of Organosilicon Compounds” (ed. Patai, S. and Rappoport, Z.), Chap. 24, Wiley, New York, 1989.Google Scholar