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Metal Transport and Loss in Hafnium and Lanthanum Aluminate Films on Si Hampered by Thermal Nitridation

  • Leonardo Miotti (a1), Carlos Driemeier (a2), Felipe Tatsch (a3), Cláudio Radtke (a4), Israel Jacob Rabin Baumvol (a5), Edon Vincent (a6), Marie Christine Hugon (a7) and Bernard Agius (a8)...

Abstract

The effects on metal transport and loss in Hf and La aluminate films deposited on Si induced by rapid thermal annealing at 1000°C were investigated. Decomposition of HfAlO films on Si during rapid thermal annealing was reveled by the decrease of the Hf and Al contents. Metal loss from LaAlO/Si structures was also observed following annealing in vacuum, while strong metal transport and interfacial reaction were induced by annealing in a O2 containing atmosphere. These instabilities were hampered by means of post deposition thermal nitridation in NH3 at temperatures lower than 1000°C performed before the rapid thermal annealing step. The role of nitridation is discussed in terms of the N profiles in the nitrided structures.

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[1] The International Technology Roadmap for Semiconductors, Semiconductor Industry Association, 2004 Update (http://public.itrs.net/).
[2] Hubbardand, K. J. Schlom, D. G., J. Mat. Res. 11, 2757 (1996).
[3] Houssa, M., High-k Dielectrics, (Institute of Physics Publishing Ltd., London, 2004).
[4] Park, M., Koo, J., Kim, J., Jeon, H., Bae, C., and Krug, C., Appl. Phys. Lett. 86, 252110 (2005).
[5] Cho, M. -H., Chung, K. B., Chang, H. S., Moon, D. W., Park, S. A., Kim, Y. K., Jeong, K., Whang, C. N., Whang, D. W., Lee, D. W., Ko, D. –H., Doh, S. J., Lee, J. H., and Lee, N. I., Appl. Phys. Lett. 85, 4115 (2004).
[6] Monaghan, S., Greer, J. C., and Elliotta, S. D., J. App. Phys. 97, 114911 (2005).
[7] Yang, Y., Zhu, W., Ma, T. P., and Stemmer, S., J. Appl. Phys. 95, 3772 (2004).
[8] Chang, J. P. and Lin, Y.-S., Appl. Phys. Lett. 79, 3824 (2001).
[9] Cho, M.-H., Chang, H. S., Cho, Y. J., Moon, D. W., Min, K.-H., Sinclair, R., Kang, S. K., Ko, D.-H., Lee, J. H., Gu, J. H., and Lee, N. I., Appl. Phys. Lett. 84, 571 (2004).
[10] Nguyen, N.V., Sayan, S., Baumvol, I. J. R., Driemeier, C., Krug, C., Wielunski, L., and Diebold, A., J. Vac. Sci. Technol. A 23, 1706 (2005).
[11] Copel, M., Gribelyuk, M., and Gusev, E., Appl. Phys. Lett. 76, 436 (2000).
[12] Miotti, L., P, K.. Bastos, Driemeier, C., Edon, V., Hugon, M. C., Agius, B., and Baumvol, I. J. R., Appl. Phys. Lett. 87, 022901 (2005).
[13] Amsel, G., Nadai, J.P., D'Artemare, E., David, D., Girard, E., Moulin, J., Nucl. Instr. Meth. 92, 481 (1971).
[14] Baumvol, I. J. R., Surf. Sci. Rep. 36, 1 (1999) and references therein.
[15] Gusev, E. P., Copel, M. C., Cartier, E., Baumvol, I. J. R., Krug, C., Gribelyuk, M. A., Appl. Phys. Lett. 76, 176 (2000).
[16] Feldman, L. C., Silverman, P. J., Williams, J. S., Jackman, T. E., and Stensgaard, I., Phys. Rev. Lett. 41, 1396 (1978).
[17] Pezzi, R. P., Copel, M., Cabral, C., and Baumvol, I. J. R., Appl. Phys. Lett. 87, 162902 (2005).
[18] Wang, J., Lim, P. C., Huan, A. C. H., Liu, C. L., Chai, J. W., Chow, S. Y., Pan, J. S., Li, Q., and Ong, C. K., Appl. Phys. Lett. 82, 2047 (2003).

Keywords

Metal Transport and Loss in Hafnium and Lanthanum Aluminate Films on Si Hampered by Thermal Nitridation

  • Leonardo Miotti (a1), Carlos Driemeier (a2), Felipe Tatsch (a3), Cláudio Radtke (a4), Israel Jacob Rabin Baumvol (a5), Edon Vincent (a6), Marie Christine Hugon (a7) and Bernard Agius (a8)...

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