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Memory Effects of Ion-Beam Synthesized Ge and Si Nanoclusters in Thin SiO2-Layers

Published online by Cambridge University Press:  10 February 2011

T. Gebel ,
J. von Borany ,
W. Skorupa ,
W. Möller ,
H.-J. Thees ,
M. Wittmaack  and
K.-H. Stegemann
T. Gebel
Affiliation:
Forschungszentrum Rossendorf. e.V., PO Box 510119, D-01314 Dresden, Germany Tel: ++49 (0)351 260 3036, Fax: ++49 (0)351 260 3285, email: T.Gebel@fz-rossendorf.de
J. von Borany
Affiliation:
Forschungszentrum Rossendorf. e.V., PO Box 510119, D-01314 Dresden, Germany Tel: ++49 (0)351 260 3036, Fax: ++49 (0)351 260 3285, email: T.Gebel@fz-rossendorf.de
W. Skorupa
Affiliation:
Forschungszentrum Rossendorf. e.V., PO Box 510119, D-01314 Dresden, Germany Tel: ++49 (0)351 260 3036, Fax: ++49 (0)351 260 3285, email: T.Gebel@fz-rossendorf.de
W. Möller
Affiliation:
Forschungszentrum Rossendorf. e.V., PO Box 510119, D-01314 Dresden, Germany Tel: ++49 (0)351 260 3036, Fax: ++49 (0)351 260 3285, email: T.Gebel@fz-rossendorf.de
H.-J. Thees
Affiliation:
Zentrum für Mikroelektronik Dresden GmbH, Grenzstraße 28, D-01 109 Dresden, Germany
M. Wittmaack
Affiliation:
Zentrum für Mikroelektronik Dresden GmbH, Grenzstraße 28, D-01 109 Dresden, Germany
K.-H. Stegemann
Affiliation:
Zentrum für Mikroelektronik Dresden GmbH, Grenzstraße 28, D-01 109 Dresden, Germany
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Abstract

Nanocluster memories are promising for future non-volatile memory applications. In this work thin SiO2 films were implanted with Ge+ and Si+ and annealed subsequently. Charge storage effects of the MOS capacitors have been studied through I-V and high frequency C-V measurements. Positive voltage pulses lead to a positive flatband voltage shift of the C-V curve. Detrapping by applying negative voltage pulses leads to a negative shift. The achieved programming window using 6 V / 100 ms pulses for Ge based structures is higher than that for Si (2.0 V vs. 0.2 V). However the retention times for Si based memories are longer. For dedicated process parameters microstructural investigations (RBS, XTEM) of Ge+ implanted SiO2 layers showed two bands of clusters, one near the interface SiO2/Si and one in the center of the SiO2 layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 375
Copyright
Copyright © Materials Research Society 2000

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References

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