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A Memory Device Utilizing Resonant Tunneling in Nanocrystalline Silicon Superlattices

Published online by Cambridge University Press:  17 March 2011

Laurent Montès ,
Galina F. Grom ,
Rishi Krishnan ,
Philippe M. Fauchet ,
Leonid Tsybeskov  and
Bruce E. White Jr.
Galina F. Grom
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627, U.S.A
Rishi Krishnan
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627, U.S.A
Philippe M. Fauchet
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627, U.S.A
Leonid Tsybeskov
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627, U.S.A
Bruce E. White Jr.
Affiliation:
Digital DNA Laboratories, Motorola, Austin, TX 78721, U.S.A
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Abstract

A quantum structure based on Si/SiO2 and fabricated using standard Si technology has strong potential for applications in non-volatile and scaled dynamic memories. Among standard requirements, such as long retention time and endurance, a structure utilizing resonant tunneling offers lower bias operation and faster write/read cycle. In addition, degradation effects associated with Fowlher-Nordheim (FN) hot electron tunneling can be avoided. Superlattices of nanometer size layers of silicon and silicon dioxide were obtained by sputtering. The size of the silicon nanocrystallites (nc-Si) is fixed by the thickness of the silicon layer which limits the size dispersion. A detailed analysis of the storage of charges in the dots, as a function of the nanocrystals size, is investigated using capacitance methods. Constant voltage and constant capacitance techniques are used to monitor the discharge of the structure. Room temperature non-volatile memory with retention times as long as months is evidenced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F2.3.1
Copyright
Copyright © Materials Research Society 2001

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References

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