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Mechanism(s) for the Suppression of the Switchable Polarization in PZT and BaTiO3

Published online by Cambridge University Press:  15 February 2011

William L. Warren ,
Duane Dimos ,
Bruce A. Tuttle ,
Gordon E. Pike ,
Mark V. Raymond ,
Robert D. Nasby ,
R. Ramesh  and
Joseph T. Evans Jr
William L. Warren
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1349
Duane Dimos
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1349
Bruce A. Tuttle
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1349
Gordon E. Pike
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1349
Mark V. Raymond
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1349
Robert D. Nasby
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1349
R. Ramesh
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1349 Bellcore, Red Bank, NJ 07701
Joseph T. Evans Jr
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1349 Radiant Technologies Inc., 1009 Bradbury Ave., Albuquerque, NM 87106
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Abstract

Switchable polarization can be significantly suppressed in ferroelectric (FE) materials by optical, thermal, and electrical processes. The thermal process can occur by either annealing the FE in a reducing environment or by heating it in air to 100°C while impressing a bias near the switching threshold. The optical process occurs while biasing the FE near the switching threshold and illuminating with bandgap light. And the electrical suppression effect occurs by subjecting the FE to repeated polarization reversals. Using electron paramagnetic resonance, polarization-vol tage measurements, and charge injection scenarios, we have been able to elucidate both electronic and ionic trapping effects that lead to a suppression in the amount of switchable polarization in FE materials. The relative roles of electronic and ionic effects in the same material can depend on the stress condition. For instance, in oxidized BaTiO3 crystals, optical and thermal suppressions occur by electronic domain pinning; electrical fatigue in the BaTiO3 crystals also appears to involve electronic charge trapping, however, it is suggested that these electronic traps are further stabilized by nearby ionic defects. In sol-gel PZT thin films with either Pt, RuO2, or La-Sr-Co-O electrodes it appears that the polarization suppression induced by electrical fatigue, a temperature/bias combination, or a light/bias combination are all primarily due to the trapping of electronic charge carriers to first order.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 51
Copyright
Copyright © Materials Research Society 1995

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