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Mechanism of Stress-Enhanced Solid-Phase Epitaxy

Published online by Cambridge University Press:  21 February 2011

T. K. Chaki
T. K. Chaki*
Affiliation:
State University of New York, Department of Mechanical Engineering, and Center for Electronic & Electro-optic Materials, Buffalo, NY 14260
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Abstract

Enhancement of solid-phase epitaxial growth (SPEG) due to hydrostatic pressures and bending stresses is explained by stress-enhanced mobility of point defects in the amorphous solid. The crystallization is by the adjustment of atomic positions in the vicinity of the crystallization/amorphous (c-a) interface due to self-diffusion in the amorphous phase, assisted by a free energy decrease equal to the difference in free energies between the amorphous and crystalline phases. Due to a mismatch in the bulk moduli between the amorphous and crystalline phases, the application of a hydrostatic pressure can develop tensile stresses in the amorphous layer near the c-a interface. Non-hydrostatic stresses in the amorphous layer enhance the mobility of point defects in the amorphous layer and, therefore, an enhancement of the SPEG rate. In the cases of both hydrostatic pressure and bending, the enhancement occurs in the tensile side, indicating that vacancy-like mechanism is predominant in SPEG.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 601
Copyright
Copyright © Materials Research Society 1992

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References

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