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The mechanism of sputter-induced orientation change in YBCO films on MgO (001)

Published online by Cambridge University Press:  10 February 2011

Y. Huang ,
B. V. Vuchic ,
P. Baldo ,
D. B. Buchholz ,
S. Mahajan ,
J. S. Lei ,
P. R. Markworth ,
K. L. Merkle  and
R. P. H. Chang
Y. Huang
Affiliation:
Materials Science Division, Argonne National Laboratory
B. V. Vuchic
Affiliation:
Materials Science Division, Argonne National Laboratory
P. Baldo
Affiliation:
Materials Science Division, Argonne National Laboratory
D. B. Buchholz
Affiliation:
Dept. of Material Science and Engineering, Northwestern University
S. Mahajan
Affiliation:
Dept. of Material Science and Engineering, Northwestern University
J. S. Lei
Affiliation:
Dept. of Material Science and Engineering, Northwestern University
P. R. Markworth
Affiliation:
Dept. of Material Science and Engineering, Northwestern University
K. L. Merkle
Affiliation:
Materials Science Division, Argonne National Laboratory
R. P. H. Chang
Affiliation:
Materials Science Division, Argonne National Laboratory
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Abstract

The mechanisms of the sputter-induced orientation change in YBa2Cu3O7-x(YBCO) films grown on MgO (001) substrates by pulsed organometallic beam epitaxy (POMBE) are investigated by x-ray diffraction, Rutherford backscatter spectroscopy (RBS), cross-section TEM (XTEM) and microanalysis. It is found that the W atom implantation concurring with the ion sputtering plays an important role in effecting the orientation change. This implantation changes the surface structure of the substrate and induces an intermediate layer in the initial growth of the YBCO film, which in turn acts as a template that induces the orientation change. It seems that the surface morphology change caused by ion sputtering has only a minor effect on the orientation change.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 458: Symposium W – Interfacial Engineering for Optimized Properties , 1996 , 497
Copyright
Copyright © Materials Research Society 1997

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References

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