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Mechanism for Step Growth on Diamond (100)

Published online by Cambridge University Press:  25 February 2011

Mei Zhu ,
Robert H. Hauge ,
John L. Margrave  and
Mark P. D'Evelyn
Mei Zhu
Affiliation:
Department of Chemistry and Rice Quantum Institute, Rice University, Houston, TX 77251–1892
Robert H. Hauge
Affiliation:
Department of Chemistry and Rice Quantum Institute, Rice University, Houston, TX 77251–1892
John L. Margrave
Affiliation:
Department of Chemistry and Rice Quantum Institute, Rice University, Houston, TX 77251–1892
Mark P. D'Evelyn
Affiliation:
Department of Chemistry and Rice Quantum Institute, Rice University, Houston, TX 77251–1892
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Abstract

A model for diamond growth on stepped diamond (100)2×1 surfaces is proposed, involving adsorption and reaction of CH3 and H on a dimer-reconstructed surface. Surface rearrangments and the breaking of C-C dimer bonds by H and/or H2 are suggested to be important The energetics were estimated by molecular mechanics (MM3). Growth is concluded to occur predominantly by extension of dimer rows, yielding a smooth surface, due to steric and bond-strain constraints on the positions of precursor-addition reactions and the kinetic stability of type SB steps against etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 683
Copyright
Copyright © Materials Research Society 1993

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References

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