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Mechanical Property Characterisation of Crystalline, Ion Implantation Amorphised and Annealed Relaxed Silicon with Spherical Indenters

Published online by Cambridge University Press:  15 February 2011

J.S. Williams
Affiliation:
Department of Electronic Materials Engineering ANU, Canberra ACT 2600
J.S. Field
Affiliation:
CSIRO Division of Applied Physics Lindfield, NSW 2070, and Department of Mechanical Engineering University of Sydney, NSW 2006, Australia.
M.V. Swain
Affiliation:
CSIRO Division of Applied Physics Lindfield, NSW 2070, and Department of Mechanical Engineering University of Sydney, NSW 2006, Australia.
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Abstract

Silicon single crystals have been ion implanted with Si ions at various energies and doses sufficient to achieve amorphisation to a depth of more than 1μm. This surface was subsequently annealed at 450°C for 30 minutes in vacuum to relax the implanted amorphous silicon. Mechanical properties of the different materials (crystalline, amorphous and annealed) were measured using a nominally 10 μm radius diamond tipped indenter and two indenting procedures; continuous loading and load partial-unloading. The crystalline material exhibited similar force-displacement behaviour to that observed by Weppelmann et al. [1] including a critical pressure to induce deformation on loading and a "pop-out" event during unloading. The amorphous and annealed materials showed a greater degree of plastic deformation but did not exhibit "pop-out" behaviour at lower loads (200 mN). The results are analysed to determine the difference of mean pressure with depth of penetration for all the materials. The onset of ductility was 5.5 to 6 GPa for the amorphous material and 10.9 GPa for the crystalline material. The depth dependence of hardness for the amorphous and annealed material showed substantial evidence of work hardening whereas the crystalline material did not.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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