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Mechanical Properties of 0.1 Micron Thick Simox Film Measured Using on-Chip Tensile Test System

Published online by Cambridge University Press:  15 March 2011

J. Amano ,
T. Ando ,
M. Shikida ,
K. Sato  and
T. Tsuchiya
J. Amano
Affiliation:
Dept. of Microsystem Engineering, Nagoya Univ., Furoh-cho, Chikusa, Nagoya 464-8603, Japan
T. Ando
Affiliation:
Dept. of Microsystem Engineering, Nagoya Univ., Furoh-cho, Chikusa, Nagoya 464-8603, Japan
M. Shikida
Affiliation:
Dept. of Microsystem Engineering, Nagoya Univ., Furoh-cho, Chikusa, Nagoya 464-8603, Japan
K. Sato
Affiliation:
Dept. of Microsystem Engineering, Nagoya Univ., Furoh-cho, Chikusa, Nagoya 464-8603, Japan
T. Tsuchiya
Affiliation:
Toyota Central R&D Labs Inc., Nagakute, Aichi 480-1192, Japan
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Abstract

We evaluated the mechanical properties of a very thin single-crystal-silicon film 140 nm thick fabricated from a SIMOX wafer using an on-chip tensile testing method. The silicon specimen oriented in the <110> direction was integrated with a loading mechanism on the same chip, which was fabricated in three etching steps. The strain in the film was measured using a newly developed tensile testing system having a two-field-of-view microscope that allowed us to observe the elongation of the specimen directly. The measured fracture strain was distributed in the range of 2.4-3.2%, which is narrower than the range of 1.3-3.5% for a thicker 5-νm film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 687: Symposium B – Materials Science of Microelectromechanical Systems (MEMS) Devices IV , 2001 , B8.3
Copyright
Copyright © Materials Research Society 2002

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References

1. Tsuchiya, T., Tabata, O., Sakata, J., and Taga, Y., J. MEMS. 7–1, 106 (1998).Google Scholar
2. Sharpe, W. N. Jr., Jackson, K. M., Hemker, K. J., and Xie, Z., J. MEMS. 10–3, 317 (2001).Google Scholar
3. Yi, T., Li, L., and Kim, C.-J., Sensors and Actuators, A83, 172 (2000).Google Scholar
4. Namazu, T., Isono, Y., and Tanaka, T., Proc. IEEE MEMS, 205 (2000).Google Scholar
5. Sato, K., Yoshioka, T., Ando, T., Shikida, M., and Kawabata, T., Sensors and Actuators, A70, 148 (1998).Google Scholar
6. Ishimaru, M., Tsunemori, T., Harada, S., Arita, M., and Motooka, T., Nucl. instrum. methods phys. res., B148, 311 (1999).Google Scholar