Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-19T07:31:05.026Z Has data issue: false hasContentIssue false
  • English
  • Français

Mechanical Behavior of Single Crystal A1 (111) and Bicrystal Al (110) Films on Silicon Substrates

Published online by Cambridge University Press:  15 February 2011

Paul R. Besser ,
John E. Sanchez Jr. ,
S. Brennan ,
John C. Bravman ,
G. Takaoka  and
I. Yamada
Paul R. Besser
Affiliation:
Advanced Process Development, Advanced Micro Devices, Sunnyvale, CA 94088 Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
John E. Sanchez Jr.
Affiliation:
Advanced Process Development, Advanced Micro Devices, Sunnyvale, CA 94088
S. Brennan
Affiliation:
Stanford Synchrotron Radiation Laboratory, Menlo Park, CA 94025
John C. Bravman
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
G. Takaoka
Affiliation:
Ion Beam Laboratory, Koyoto University, Kyoto, Japan
I. Yamada
Affiliation:
Ion Beam Laboratory, Koyoto University, Kyoto, Japan
Get access

Abstract

Single crystal Al (111) films and bicrystal Al (110) films have been deposited on bare Si (111) and (100) wafers using ion-cluster beam deposition. The stress in the films was determined using X-rays diffraction as the films were thermally cycled from room temperature to 400C. The (111) film exhibited nearly ideal elastic behavior as the stress was essentially linear with temperature. The (110) Al film yielded in compression at a lower temperature and stress than the (111) film and exhibited broad hillocks not found in the Al (111) film. During the second thermal cycle, both films behaved in a nearly ideal elastic fashion. Measurement of the strain relaxation in the films during the second thermal cycle showed that the (110) film relaxed significantly while the (111) did not relax.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 659
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Yamada, I., Inokawa, H. and Takagi, T., J. Appl. Phys. 56(10), 2746 (1984).CrossRefGoogle Scholar
2) Inokawa, H., Yamada, I. and Takagi, T., Jap. J. Appl. Phys. 24 (3), L173 (1985).Google Scholar
3) Yamada, I., Usui, H., Tanaka, S., Dahmen, U. and Westmacott, K.H., J. Vac. Sci. Technol. A 8(3) 1443 (1990).Google Scholar
4) Nix, W.D., Met. Trans. A, 20A, 2217–2245 (1989).Google Scholar
5) Sanchez, J. E. Jr and Arzt, E., Scripta Mettallurgica 27, 284 (1992).Google Scholar
6) Venkatraman, R. and Bravman, J.C., J. Mat. Res. 7, 2040 (1992).Google Scholar
7) Thangaraj, M., Hingerberger, S., Westmacott, K.H. and Dahmen, U., in Favreau, D.P., Shacham-Diamand, Y., and Horiike, Y, Editors, Advanced Metallization for ULSI Applications in 1993, 247 (1993).Google Scholar
8) Venkatraman, R., Besser, P.R., Bravman, J.C., Brennan, S., J. Mater. Res. 9(2), 328(1994).Google Scholar
9) Besser, P.R., Brennan, S. and Bravman, J.C., J. Mater. Res. 9(1) 13 (1994).CrossRefGoogle Scholar
10) Noyan, I.C., Adv. X-ray Anal. 28, 281–288 (1985).Google Scholar
11) Bain, J.A. and Clemens, B.M., MRS Bulletin 17(7), 46 (July, 1992).Google Scholar
12) Flinn, P.A., Gardner, D.S., and Nix, W.D., IEEE Trans. Electr. Dev. 25, 2160 (1987).Google Scholar