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Measurements of the Refractive Indices of MOCVD and HVPE Grown AlGaN Films Using Prism-Coupling Techniques Correlated with Spectroscopic Reflection/Transmission Analysisa

Published online by Cambridge University Press:  11 February 2011

Norman A. Sanford ,
Lawrence H. Robins ,
Albert V. Davydov ,
Alexander J. Shapiro ,
Denis V. Tsvetkov ,
Vladimir A. Dmitriev ,
Silver Spring ,
Stacia Keller ,
Umesh K. Mishra  and
Steven P. DenBaars
Norman A. Sanford
Affiliation:
National Institute of Standards and Technology, Boulder, CO 80305, U.S.A.
Lawrence H. Robins
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899, U.S.A
Albert V. Davydov
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899, U.S.A
Alexander J. Shapiro
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899, U.S.A
Denis V. Tsvetkov
Affiliation:
Technologies and Devices International Inc.
Vladimir A. Dmitriev
Affiliation:
Technologies and Devices International Inc.
Silver Spring
Affiliation:
MD 20904, U.S.A.
Stacia Keller
Affiliation:
University of California, Santa Barbara, CA 93106, U.S.A.
Umesh K. Mishra
Affiliation:
University of California, Santa Barbara, CA 93106, U.S.A.
Steven P. DenBaars
Affiliation:
University of California, Santa Barbara, CA 93106, U.S.A.
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Abstract

Waveguide prism-coupling methods were used to measure the ordinary and extraordinary refractive indices of AlxGa1-xN films grown on sapphire substrates by HVPE and MOCVD. Several discrete wavelengths ranging from 442 nm to 1064 nm were used and the results were fit to one-term Sellmeier equations. The maximum standard uncertainty in the refractive index measurements was ± 0.005 and the maximum standard uncertainty in the self-consistent calculation for film thickness was ± 15 nm. Analysis of normal-incidence spectroscopic transmittance and reflectance measurements, correlated with the prism-coupling results, was used to determine the ordinary refractive index as a continuous function of wavelength from the band gap wavelength of each sample (between 252 nm and 364 nm) to 2500 nm. The Al compositions of the samples were determined using energy-dispersive X-ray spectroscopy analysis (EDS). HVPE grown samples had compositions x = 0.279, 0.363, 0.593, and 0.657. MOCVD samples had x = 0.00, 0.419, 0.507, 0.618, 0.660, and 0.666. The maximum standard uncertainty in the absolute EDS-determined value for x was ± 0.02.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L11.21
Copyright
Copyright © Materials Research Society 2003

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References

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