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Measurement of the Dependence of Stress and Strain on Crystallographic Orientation in Cu and Al thin Films

Published online by Cambridge University Press:  21 February 2011

E. M. Zielinski ,
R. P. Vinci  and
J. C. Bravman
E. M. Zielinski
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
R. P. Vinci
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
J. C. Bravman
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
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Abstract

The orientational dependence of stress and strain was measured for (111) and (110) oriented grains in an Al thin film which hillocked upon heating, and (111) and (100) oriented grains in Cu thin films, one of which exhibits abnormal (100) grain growth. Results from the Al thin film were inconclusive in the evaluation of the Sanchez model for hillocking, however they indicate that the Nix model for the orientational dependence of yield stress is not applicable to individual grains at room temperature. Results from the Cu thin films suggest that suppression of (100) abnormal grain growth is due to isostress averaging among the grains of varying orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 429
Copyright
Copyright © Materials Research Society 1995

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