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Measurement of Mobility Profile in GaAs MESFET's by Schottky Barrier Technique with Gate Current Correction

  • Xiang Qi (a1), Wang Lichun (a1) and Luo Jinsheng (a1)

Abstract

The mobility profile of electrons in active layer of GaAs MESFET has an inportant effect on the device performance. The mobilities at layers of different depth can be measured by changing the negative gate bias, but the electron mobility near the surface can't be measured yet due to the depletion of electrons in the surface layer. This paper introduces a differential d.c. equivalent model, in which the Schottky barrier can be forward biased and the gate current correction is properly included. Applying this model, we can precisely calculate the drift and gecmetrical magnetic resistance mobilities very close to the surface layer.

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Measurement of Mobility Profile in GaAs MESFET's by Schottky Barrier Technique with Gate Current Correction

  • Xiang Qi (a1), Wang Lichun (a1) and Luo Jinsheng (a1)

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