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Measurement and Interpretation of Strain Relaxation in Passivated Al-0.5%Cu Lines

Published online by Cambridge University Press:  22 February 2011

Paul R. Besser ,
Thomas N. Marieb ,
John C. Bravman  and
Paul A. Flinnt
Paul R. Besser
Affiliation:
Advanced Process Development, Advanced Micro Devices, Sunnyvale, CA 94088 Materials Science and Engineering Dept., Stanford University, Stanford, CA 94305
Thomas N. Marieb
Affiliation:
Materials Science and Engineering Dept., Stanford University, Stanford, CA 94305 Components Research, Intel Corporation, Santa, Clara, CA 95033
John C. Bravman
Affiliation:
Materials Science and Engineering Dept., Stanford University, Stanford, CA 94305
Paul A. Flinnt
Affiliation:
Materials Science and Engineering Dept., Stanford University, Stanford, CA 94305 Components Research, Intel Corporation, Santa, Clara, CA 95033
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Abstract

X-ray diffraction was used to measure the strain relaxation in passivated Al-0.5%Cu lines at 200°C after cooling directly from an anneal at the passivation deposition temperature. The strain decay is fit with a stress-assisted, thermally-activated relaxation model. A high-voltage scanning electron microscope was used to image the presence and growth of voids through the passivation. The time scale of the void growth is not the same as that of the hydrostatic relaxation, indicating that voiding is not solely responsible for the observed relaxation. The relaxation of the line is modeled using a von Mises yield criterion and allowing elastic compliance of the passivation. The magnitude of the calculated relaxation agrees with the measurements. It is suggested that a combination of voiding and passivation compliance is responsible for the measured hydrostatic strain relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 275
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Flinn, P.A. and Chiang, C.. J. Appl. Phys., 67(8), 2927 (1990).Google Scholar
2. Greenbaum, B., Sauter, A., Flinn, P. and Nix, W.. Appl. Phys. Lett., 58(17), 1845 (1991).Google Scholar
3. Hinode, K., Asano, I., Ishiba, T., Homma, Y.. J. Vac. Sci. Technol. B, 8(3), 495 (1990).Google Scholar
4. Besser, P.R., Mack, A. Sauter, Fraser, D.B. and Bravman, J.C.. J. Electrochem. Soc., 140(6), 1769 (1993).Google Scholar
5. Besser, P.R., Brennan, S. and Bravman, J.C.. J. Mat. Res., 9(1), 13, 1994.Google Scholar
6. Besser, P.R., Marieb, T.N., and Bravman, J.C.. In Thin Films: Stresses and Mechanical Properties IV, Townsend, P.H., Li, C.Y., Sanchez, J., and Weihs, T.P., editors, (Mat. Res. Soc. Symp. Proc. 308, Pittsburgh, PA, 1990).Google Scholar
7. Ashby, M.F. and Frost, H.J.. In Argon, A.S., editor, Constitutive Equations in Plasticity, (MIT Press, Cambridge, MA, 1975) pp. 111–127.Google Scholar
8. Flinn, P.A., Gardner, D.S., Nix, W.D.. IEEE Trans. Electron Dev., ED–34, 689 (1987).Google Scholar
9. Besser, P.R., Marieb, T.N., Flinn, P.A. and Bravman, J.C.. Submitted to J. Mat. Res., 1994.Google Scholar
10. Lankes, J.C. and Wassermann, G.. Zeitschrift fur Metallkunde, 38 (1950).Google Scholar
11. Madden, M. C., Abratowski, E.A., Marieb, T. and Flinn, P.A.. In Materials Reliability in Microelectronics II, Thompson, C.V. and Lloyd, J.R., editors, (Mat. Res. Soc. Symp. Proc. 265, Pittsburgh, PA, 1992) pp. 33–38.Google Scholar
12. Follstaedt, D.M., Avyle, J.A. van den, Romig, A.D. and Knapp, J.A.. In Materials Reliability Issues in Microelectronics, Lloyd, J.R., Yost, F.G., and Ho, P.S., editors, (Mat. Res. Soc. Symp. Proc. 225, Pittsburgh, PA, 1992), pp 225–231.Google Scholar
13. Besser, P.R. and Bravman, J.C.. In Second International Conference on Stress Induced Phenomena in Metallization, Ho, P.S. and Li, C.Y., editors, (American Vac. Soc. Conf. Proc., American Inst. Phys., New York, 1993).Google Scholar