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Measured and Simulated Temperature Dependence of A-Si:H Solar Cell Parameters

Published online by Cambridge University Press:  10 February 2011

H. Stiebig ,
Th. Eickhoff ,
J. Zimmer ,
C. Beneking  and
H. Wagner
H. Stiebig
Affiliation:
Forschungszentrum Jülich GmbH, Institut für Schicht- und Ionentechnik - Photovoltaik, D-52425 Jülich, Germany
Th. Eickhoff
Affiliation:
Forschungszentrum Jülich GmbH, Institut für Schicht- und Ionentechnik - Photovoltaik, D-52425 Jülich, Germany
J. Zimmer
Affiliation:
Forschungszentrum Jülich GmbH, Institut für Schicht- und Ionentechnik - Photovoltaik, D-52425 Jülich, Germany
C. Beneking
Affiliation:
Forschungszentrum Jülich GmbH, Institut für Schicht- und Ionentechnik - Photovoltaik, D-52425 Jülich, Germany
H. Wagner
Affiliation:
Forschungszentrum Jülich GmbH, Institut für Schicht- und Ionentechnik - Photovoltaik, D-52425 Jülich, Germany
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Abstract

In contrast to the successful application of analytic equations to the current-voltage behaviour of crystalline silicon solar cells in the dark and under AM 1.5 illumination, the description of a-Si:H solar cells parameters requires device modelling concepts taking the full set of semiconductor equations into account. This in particular holds for the explanation of the temperature dependence (225-400K) of experimentally determined a-Si:H p-i-n solar cell parameters. Device modelling calculations show that the observed decrease of the short circuit current at AM 1.5 with lower T is much more effected by the additional charge trapped in the tail states and recharging of defect states than by the broadening of the gap. The induced electric field distortion blocks the extraction of photo generated holes. The open circuit voltage Voc increases with lower T which is caused by the same trapping effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 855
Copyright
Copyright © Materials Research Society 1996

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References

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