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The mean inner potential of GaN measured from nanowires using off-axis electron holography

Published online by Cambridge University Press:  01 February 2011

Andrew See Weng Wong ,
Ghim Wei Ho ,
Rafal E Dunin-Borkowski ,
Takeshi Kasama ,
Rachel A Oliver ,
Pedro MFJ Costa  and
Colin John Humphreys
Andrew See Weng Wong
Affiliation:
swaw2@cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, Pembroke Street, New Museum Site, Cambridge, Cambridgeshire, CB23QZ, United Kingdom, 44-(0)1223-334368
Ghim Wei Ho
Affiliation:
gwh23@cam.ac.uk, University of Cambridge, Nanoscience Center, United Kingdom
Rafal E Dunin-Borkowski
Affiliation:
red10@cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, United Kingdom
Takeshi Kasama
Affiliation:
tk305@cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, United Kingdom
Rachel A Oliver
Affiliation:
rao28@cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, United Kingdom
Pedro MFJ Costa
Affiliation:
pmfjc2@cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, United Kingdom
Colin John Humphreys
Affiliation:
colin.humphreys@msm.cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, United Kingdom
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Abstract

The mean inner potentials of wurtzite GaN nanowires are measured using off-axis electron holography in the transmission electron microscope (TEM). The nanowires have a circular cross-section and are suspended across holes in a holey carbon film, resulting in an accurate knowledge of their thickness profiles and orientations. They are also free of the implantation and damage that is present in mechanically-polished ion-milled TEM specimens. The effect of a thin amorphous coating, which is present on the surfaces of the nanowires, on measurements of their mean inner potential is assessed. A value for the mean inner potential of GaN of (16.7 ± 0.3) V is obtained from these samples.

Keywords

III-Vnanostructuretransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF11-02
Copyright
Copyright © Materials Research Society 2006

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References

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