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The mean inner potential of GaN measured from nanowires using off-axis electron holography

  • Andrew See Weng Wong (a1), Ghim Wei Ho (a2), Rafal E Dunin-Borkowski (a3), Takeshi Kasama (a4), Rachel A Oliver (a5), Pedro MFJ Costa (a6) and Colin John Humphreys (a7)...

Abstract

The mean inner potentials of wurtzite GaN nanowires are measured using off-axis electron holography in the transmission electron microscope (TEM). The nanowires have a circular cross-section and are suspended across holes in a holey carbon film, resulting in an accurate knowledge of their thickness profiles and orientations. They are also free of the implantation and damage that is present in mechanically-polished ion-milled TEM specimens. The effect of a thin amorphous coating, which is present on the surfaces of the nanowires, on measurements of their mean inner potential is assessed. A value for the mean inner potential of GaN of (16.7 ± 0.3) V is obtained from these samples.

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