Skip to main content Accessibility help
×
Home

MBE Growth of GaN on NdGaO3 (101)

  • C. Fechtmann (a1), V. Kirchner (a1), S. Einfeldt (a1), H. Heinke (a1), D. Hommel (a1), T. Lukasiewicz (a2), Z. Luczynski (a2) and J. Baranowski (a3)...

Abstract

We report on the growth of GaN on NdGaO3 (101) by plasma assisted molecular beam epitaxy (MBE). NdGaO3 (101) is an interesting alternative substrate compared to A12O3 due to its smaller lattice mismatch of +1.2 % to hexagonal (0001) GaN. Using photoluminescence (PL), X-ray diffraction (XRD), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM) the optical and structural properties of the GaN thin films grown on NdGaO3 are investigated and compared to those grown on c-plane sapphire. The intended epitaxial relationship of [0001] GaN ║ [101] GaN is hard to realise as confirmed by several tilted or even polycrystalline films. However, the layer quality was found to improve considerably, when the NdGaO3 surface showed a (l × 1) instead of other reconstructions.

Copyright

References

Hide All
1. Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Yamada, T., Mukai, T. Jpn. J. Appl. Phys. 34 (10B), L1332 (1995).
2. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., Kiyoku, H., Appl. Phys. Lett. 69 (26), 4056 (1996).
3. Sasaki, T., Matsuoka, T., J. Appl. Phys. 64 (9), 4531 (1988).
4. Sverdlov, B. N., Martin, G. A., Morkoç, H., Smith, D. J., Appl. Phys. Lett. 67 (14), 2063(1995).
5. Kuramata, A., Horino, K., Domen, K., Shinohara, K., Tanahashi, T., Appl. Phys. Lett. 67 (17), 2521. (1995)
6. Hellmann, E. S., Lilienthal-Weber, Z., Buchanan, D. N. E., MRS Internet J. NitrideSemicond. Res. 2, 30 (1997).
7. Kung, P., Saxler, A., Zhang, X., Walker, D., Lavado, R. and Razeghi, M, Appl. Phys. Lett. 69, 2116 (1996).
8. Okazaki, H., Arakawa, A., Asahi, T., Oda, O., Aiki, K., Solid State Electron. 41 (2), 263 (1997).
9. Matsuoka, T. in Gallium Nitride and Related Materials, edited by Ponce, F.A., Dupuis, R. D., Nakamura, S., Edmond, J. A. (Mat. Res. Soc. Proc. 395, Boston, MA, 1995) pp. 39.
10. Olson, S., Stromberg, R., Zeitschrift für Kristallographie 211, 895 (1996).
11. Sasaura, M., Miyazawa, Sh., Mukaida, M., J. Appl. Phys. 68 (7), 3643 (1990).
12. Sasaura, M., Miyazawa, Sh., J. Cryst. Growth 131, 413 (1993).

Related content

Powered by UNSILO

MBE Growth of GaN on NdGaO3 (101)

  • C. Fechtmann (a1), V. Kirchner (a1), S. Einfeldt (a1), H. Heinke (a1), D. Hommel (a1), T. Lukasiewicz (a2), Z. Luczynski (a2) and J. Baranowski (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.