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MBE Growth of GaAs on Porous Silicon

  • T. L. Lin (a1), L. Sadwick (a1), K. L. Wang (a1), S. S. Rhee (a1), Y. C Kao (a1), R. Hull (a2), C.W. Nieh (a3), D. N. Jamieson (a3), J. K. Liu (a4) and M-A. Nicolet (a3)...

Abstract

GaAs layers have been grown on porous silicon (PS) substrates by molecular beam epitaxyNo surface morphology deterioration was observed onGaAs-on-PS layers in spite of the roughness of PS. A 10% Rutherford backscattering spectroscopy (RBS) channeling minimum yield for GaAs-on-PS layers as compared to 16% for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy (TEM) reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers.

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