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MBE Growth of Artificially-Layered Magnetic Metal Structures on Semiconductors

Published online by Cambridge University Press:  21 February 2011

R.F.C. Farrow  and
C.H. Lee
R.F.C. Farrow
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, Ca 95120-6099.
C.H. Lee
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, Ca 95120-6099.
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Abstract

In this review, recent developments in MBE growth of artificially-layered magnetic metal structures on semiconductor substrates are considered. It is seen that the ability to seed specific orientations of such structures and to probe their structural and chemical properties with a variety of in situ probes are key advantages of MBE over more conventional deposition techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 211
Copyright
Copyright © Materials Research Society 1990

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