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MBE Growth and Characterization of II-VI Blue/Green Laser Diodes Having CW Operation at Room Temperature

  • M.D. Ringle (a1), D.C. Grillo (a1), Y. Fan (a1), L. He (a1), J. Han (a1), R.L. Gunshor (a1), A. Salokatve (a2), H. Jeon (a2), M. Hovinen (a2), A.V. Nurmikko (a2), G.C. Hua (a1) and N. Otsuka (a3)...

Abstract

We have obtained continuous-wave laser operation at room temperature from a (Zn,Mg)(S,Se)-based Il-VI separate-confinement heterostructure where injection of holes into the p-type quaternary was achieved through the employment of a Zn(Se,Te) graded-bandgap contact. The laser devices exhibit threshold current densities of below 300 A/cm2 and voltages below 6 V. Issues related to the control of the growth of the quaternary (Zn,Mg)(S,Se) compound, and a proposal to further reducing the laser operating voltage will also be described.

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