Skip to main content Accessibility help

Mbe Growth and Characterization of (GaAs)l−x(Si2)x and (GaAs)1−x(Si2)x/GaAs Superlattices on GaAs Substrates

  • H.P. Lee (a1), F.J. Szalkowski (a1), X. Zeng (a1), J. Wolfenstine (a2) and J. W. Ager (a3)...


Lateral compositional graded (GaAs)1-x(Si2)x alloys were deposited on GaAs substrates in a III-V molecular beam epitaxy (MBE) chamber equipped with a electron-beam Si evaporation source. Single crystal GaAs-Si alloys were formed when the deposition temperature was 600°C or higher. The alloys were characterized by Energy Dispersive X-ray Spectroscopy (EDS), Raman scattering measurement and cross-sectional Transmission Electron Microscopy (XTEM). Dislocation-free (GaAs)1-x(Si2)x films of up to x = 0.07 were deposited. For alloys with x between 0.15 < < 0.25, the morphology deteriorates and a high density of stacking faults and micro-twins were observed.



Hide All
1. MBE Book by Cho, Al
2. Banerjee, I., Chung, D.W., and Kroemer, H., Appl. Phys. Lett. 46, 494 (1985).
3. Baird, R.J., Holloway, H., Tamor, M.A., Hurley, M.D., and Vassell, W.C., J. Appl. Phys. 69, 226 (1991).
4. Romano, L.T., Robertson, I.M., Greene, J.E., and Sundgren, J.-E., Phys. Rev. B36, 7523 (1987).
5. Cadien, K.C., Eltoukhy, A.H., and Green, J.E., Appl. Phys. Lett. 38, 773 (1991).
6. Kim, Y.-W., Mei, D.H., Lubben, D., Robertson, I., and Greene, J.E., J. Appl. Phys. 76, 1644, (1994).
7. Lee, H.P., Szalkowski, F., Sato, D., Liu, X., Ranalli, E. and George, T., J. Vac. Sci. Technol. B12, 1163 (1994).
8. Sato, D.L., Szalkowski, F.J., and Lee, H.P., Appl. Phys. Lett. 66, 1791 (1995).
9. Sato, D.L., Szalkowski, F.J., and Lee, H.P., Presented in 1995 Spring MRS Meeting, Symp.B2.12.
10. Rao, T. Sudersena and Horikoshi, Y., Mat. Res. Soc. Proceeding Vol. 222, 151, 1991.
11. Lo, Y.H., Bhat, R., Huang, D.M., Kosa, M.A., and Lee, T.P., Appl. Phys. Lett. 58, 1961 (1991).
12. Hadegawa, H., Akazawa, M., Ishii, H., and Matsuzaki, K., T. J. Vac. Sci. Technol. B7, 870, (1989).
13. Costa, J.C., Williamson, F., Miller, T.J., Beyzaki, K., Nathan, M.I., Mui, D.S. L., Strite, S., and Morkoc, H., Appl. Phys. Lett. 58, 382 (1991).
14. The compact e-beam source was manufactured by Thennionics Laboratory, Model 100-0010R/SK.
15. Wagner, J. and Ramsteiner, M. IEEE J. Quantum Electron. QE-25, 993 (1989).
16. , Murray et al. J. Appl. Phys. 66, 2589 (1989)
17. Brandt, O., Crook, G., Ploog, K., Bierwold, R., Hohenstein, M., Maier, M., and Wagner, J., Jpn. J. Appl. Phys. 32, L24 (1993).
18. Matthew, J.W. and Blakeslee, A.E., J. Cryst. Growth 27, 118 (1974).

Related content

Powered by UNSILO

Mbe Growth and Characterization of (GaAs)l−x(Si2)x and (GaAs)1−x(Si2)x/GaAs Superlattices on GaAs Substrates

  • H.P. Lee (a1), F.J. Szalkowski (a1), X. Zeng (a1), J. Wolfenstine (a2) and J. W. Ager (a3)...


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.