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MBE Growth and Characterization of Fe- and Co-Based Diluted Magnetic Semiconductors

  • B. T. Jonker (a1), J. J. Krebs (a1), G. A. Prinz (a1), X. Liu (a2), A. Petrou (a2) and L. Salamanca-Young (a3)...

Abstract

We have grown single crystal zincblende epilayers of the diluted magnetic semiconductors Zn1−xFexSe and Zn1−xCoxSe on GaAs(001) by molecular beam epitaxy. We summarize the growth and the structural, magnetic and optical properties of these materials, and contrast their properties with those of the more well-studied Mn-based family of diluted magnetic semiconductor (DMS) compounds. Both materials exhibit larger values for the band electronmagnetic ion and ion-ion exchange parameters than found in (Zn,Mn)Se. These values are most strongly enhanced in (Zn,Co)Se, which represents the first member of a new Co-based family of DMS compounds. Thus the incorporation of (Zn,Fe)Se and (Zn,Co)Se layers in quantum well and superlattice structures holds very exciting prospects for future work.

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