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Mbe Growth And Characterization Of Er/O And Er/F Doped Si Light Emitting Structures

  • W.-X. Ni (a1), C.-X. Du (a1), K. B Joelsson (a1), G. V. Hansson (a1), G. Pozina (a2), I. A. Buyanova (a2), W. M. Chen (a2) and B. Monemar (a2)...

Abstract

By using a low temperature growth process, Er doping in Si during MBE using Er2O3 or ErF3 as dopant sources has achieved a level of 5 × 1019 cm−3 without precipitation and generation of other extended defects. Luminescence properties of these Er-doped MBE Si structures have been extensively studied using both photon and hot electron impact excitation at a wide range of temperatures (2–300 K). It has been found that by incorporating C into Er/O doped layers, the room temperature EL emission with a FWHM value of 14 meV was ten times more intense than that with lower C doping. Post thermal annealing gave a strong effect on Er/F doped layers, leading to a 7-fold increase of the highest peak intensity while the peak line width reduced to 0.12 meV, which is very important for laser applications.

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