Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-23T09:50:18.079Z Has data issue: false hasContentIssue false
  • English
  • Français

MBE Alloy Clustering Kinetics - A Stochastic Model Study

Published online by Cambridge University Press:  22 February 2011

R. Venkatasubramanian  and
Rahim Khoie
R. Venkatasubramanian
Affiliation:
Department of Electrical and Computer Engineering, University of Nevada, Las Vegas Las Vegas, NV 89154
Rahim Khoie
Affiliation:
Department of Electrical and Computer Engineering, University of Nevada, Las Vegas Las Vegas, NV 89154
Get access

Abstract

A theoretical study of alloy clustering in an hypothetical diamond cubic alloy, 00.560.5 in which thermodynamics favors phase separation is performed based on a master equation approach. The a-b atom pair interaction is assumed weaker and repulsive (-0.25 eV). It is shown that below 375°C, due to negligible surface migration, there is no clustering of the alloy, but, the surface roughness is very large. In the intermediate temperature range of 300 – 625°C, with increasing temperature, surface migration increases, resulting in more clustering and decreased surface roughness. Above 500°C, due to very high surface migration, complete phase separation and smooth surface result. It is shown that the conventional MBE growth techniques are incompatible with the growth of good quality heterostructures which consist of alloys having large poistive enthalpy of mixing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 129
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Newbury, P. R., Shahzad, K., Petruzzello, J., and Cammack, D. A., J. Appl. Phys., 66, (1989), p4950.Google Scholar
2. Welch, D. F., Wicks, G. W., and Eastman, L. F., Appl. Phys. Lett., 43, (1983), p762.CrossRefGoogle Scholar
3. Cheng, K. Y., Cho, A. Y., Drummond, T. J. and Morkoc, H., Appl. Phys. Lett., 40, (1982), p147.Google Scholar
4. Najajima, K., Tanahashi, T. and Akita, K., Appl. Phys. Lett., 41, (1982), p194.Google Scholar
5. Singh, J., Dudley, S., Davies, B. and Bajaj, K. K., J. Appl. Phys., 60, (1986), p3167.Google Scholar
6. Venkatasubramanian, R., ‘Stochastic modeling of MBE growth of compound semiconductors’ (submitted for publication in J. Mat. Research).Google Scholar
7. Venkatasubramanian, R. and Khoie, Rahim, ‘Dynamics of MBE growth surface roughening of Ge- A stochastic model study’ Proceedings of MRS, 202, Ed. Thompson, C. V., Tsao, J. Y. and Srolovitz, D. I., 1990.Google Scholar