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Materials Characterization using THz Ellipsometry

  • Tino Hofmann (a1), Craig M. Herzinger (a2), John A. Woollam (a3) and Mathias Schubert (a4)

Abstract

We employ spectroscopic ellipsometry in the terahertz (0.2 to 1.5 THz) and the mid-infrared (9 to 50 THz) spectral range for the non-contact, non-destructive optical determination of the free-charge-carrier properties of low-doped Silicon bulk and thin film structures. We find that carrier concentrations as low as 1015 cm−3 in thin films can be unambiguously determined. We envision ellipsometry in the THz spectral range for future non-contact, non-destructive monitoring and control applications.

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