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Materials and Structures for Advanced III-HBTs

  • P. M. Asbeck (a1), C. W. Tu (a1), M. C. Ho (a1), S. L. Fu (a1), R. C. Gee (a1) and T. P. Chin (a1)...

Abstract

This paper reviews the present status of heterojunction bipolar transistor (HBT) technology based on GaAlAs/GaAs and InP/InGaAs materials, and discusses a variety of approaches for device improvement. Among the possibilities presented are novel structures to reduce base-collector capacitance, and novel materials to increase breakdown voltage and reduce base-emitter turn-on voltage.

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1. Khatibzadeh, M.A. et al., Tech. Dig. 1992 Micr. and Mm-wave Monol. Circ. Symp., p. 47.
2. Wang, K.C., Asbeck, P. M., Chang, M.-C.F., Nubling, R. B., Pierson, R. L., Sheng, N.-H., Sullivan, G. J., Yu, J., Chen, A., Clement, D., Tsen, T. C., Basit, H. F., George, J. D., and Young, R., IEEEJ. Sol.-St. Circ., 26, 1669 (1991).
3. Wang, G.-W., Pierson, R. L., Asbeck, P. M., Wang, K.-C., Wang, N.-L., Nubling, R., Chang, M. F., Salerno, J., and Sastry, S., IEEE Electr. Dev. Lett., 12, 347 (1991).
4. Streit, D. C., Oki, A. K., Umemoto, D. K., Velebir, J. R., Stolt, K. S., Yamada, F. M., Saito, Y., Hafizi, M. E., Bui, S., and Tran, L. T., IEEE Electr. Dev. Lett., 12, 471 (1991).
5. Hafizi, M., Jensen, J. F., Metzger, R. A., Stanchina, W. E., Rensch, D. B., and Allen, Y. K., IEEE Electr. Dev. Lett., 13, 612 (1992).
6. Chin, T. P., Kirchner, P. D., Woodall, J. M., and Tu, C.W., Appl. Phys. Lett., 59, 2865 (1991).
7. Abernathy, C. R., Pearton, S. J., Ren, F., Hobson, W. S., Fullowan, T. R., Katz, A., Jordan, A. S., and Kovalchick, J., J. Cryst. Growth, 105, 375 (1990).
8. Hanson, A. W., Stockman, S. A., and Stillman, G. E., IEEE Electr. Dev. Lett., 13, 504 (1992).
9. Gee, R. C., Chin, T. P., Tu, C. W., Asbeck, P. M., Lin, C., and Woodall, J. M., IEEE Electr. Dev. Lett., 13, 247 (1992).
10. Frei, M. R., Hayes, J. R., Song, J. I., Caneau, C., Bhat, R., and Cox, H., 1992 Dev. Res. Conf.
11. Mondry, M. J. and Kroemer, H., IEEE Electr. Dev. Lett., 6, 175 (1985).
12. Hanson, A. W., Stockman, S. A., and Stillman, G. E., IEEE Electr. Dev. Lett., 14, 25 (1993).
13. Chen, Y. K., Kapro, R., Tseng, W. T., and Wu, M. C., 1992 Dev. Res. Conf.
14. Tokumitsu, E., Deniai, A. G., Joyner, C. H., Chandrasekhar, S., and Wu, M. C., Appl. Phys. Lett., 57, 2841 (1990).
15. Pekarik, J. J., Kroemer, H. and English, J., 1992 Dev. Res. Conf.

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