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Materials and Structures for Advanced III-HBTs

  • P. M. Asbeck (a1), C. W. Tu (a1), M. C. Ho (a1), S. L. Fu (a1), R. C. Gee (a1) and T. P. Chin (a1)...


This paper reviews the present status of heterojunction bipolar transistor (HBT) technology based on GaAlAs/GaAs and InP/InGaAs materials, and discusses a variety of approaches for device improvement. Among the possibilities presented are novel structures to reduce base-collector capacitance, and novel materials to increase breakdown voltage and reduce base-emitter turn-on voltage.



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