Skip to main content Accessibility help

Materials and Device Design with ZnO-Based Diluted Magnetic Semiconductors

  • Kazunori Sato (a1) and Hiroshi Katayama-Yoshida (a1)


We propose a materials design to fabricate the transparent and half-metallic ferromagnets in V-, Cr-, Mn+hole, Fe-, Co-, and Ni-doped ZnO based upon ab initio electronic structure calculation. Mn-doped ZnO is anti-ferromagnetic spin glass state, however, it becomes half-metallic ferromagnets upon hole doping. The ferromagnetic state becomes more stable by electron doping in Fe-, Co- or Ni-doped ZnO. From the point of practical applications, it is feasible to realize the half-metallic ferromagnets with high Curie temperature, because n-type ZnO is easily available. We propose the design of new functional devices, such as spin-FET, photo-induced ferromagnets, and spin-injection devices using negative electron affinity in the wide band gap semiconductors.



Hide All
1. Yamamoto, T. and Katayama-Yoshida, H., Jpn. J. Appl. Phys. 38 (1999) L166.
2. Joseph, M., Tabata, H., and Kawai, T., Jpn. J. Appl. Phys. 38 (1999) L1205.
3. Sato, K. and Katayama-Yoshida, H., Jpn. J. Appl. Phys. 39 (2000) L555.
4. Sato, K. and Katayama-Yoshida, H., Jpn. J. Appl. Phys. 40 (2001) L334.
5. Akai, H., Phys. Rev. Lett. 81 (1998) 3002.
6. Akai, H. and Dederichs, P. H., Phys. Rev. B47(1993) 8739.
7. Akai, H., Akai, M., Bluegel, S., Drittler, B., Ebert, H., Terakura, K., Zeller, R. and Dederichs, P. H., Prog. Theor. Phys. Suppl. 101 (1990) 11.
8. Wyckoff, R. W. G., “Crystal Structures” (Wiley, New York, 1986) 2nd. ed., Vol. 1, p. 112.


Altmetric attention score

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed