Reconfigurable nanowire transistors provide the operation of unipolar p-type and n-type FETs freely selectable within a single device. The enhanced functionality is enabled by controlling the currents through two individually gated Schottky junctions. Here we analyze the impact of the Schottky barrier height on the symmetry of Silicon nanowire RFET transfer characteristics and their performance within circuits. Prospective simulations are carried out, indicating that germanium nanowire based RFETs of the same dimensions will show a distinctly increased performance, making them a promising material solution for future reconfigurable electronics.
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