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Material and Electrical Characterization of HfO2 Films for MIM Capacitors Application

  • Hang Hu (a1), Chunxiang Zhu (a1), Y. F. Lu (a1), Y. H. Wu (a1), T. Liew (a1), M. F. Li (a1), B.J. Cho (a1), W. K. Choi (a1) and N. Yakovlev (a2)...

Abstract

Thin films of HfO2 high-κ dielectric have been prepared by pulsed-laser deposition (PLD) at various deposition conditions. X-ray diffraction (XRD), atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS) were used to characterize the deposited films. Experimental results show that substrate temperature has little effect on the stoichiometry, while deposition pressure plays an important role in determining the ratio of Hf and O. The electrical properties of HfO2 Metal-Insulator-Metal (MIM) capacitors were investigated at various deposition temperatures. It is shown that the HfO2 (56 nm) MIM capacitor fabricated at 200 oC shows an overall high performance, such as a high capacitance density of ∼3.0 fF/νm2, a low leakage current of 2x10-9 A/cm2 at 3 V, etc. All these indicate that the HfO2 MIM capacitors are very suitable for use in Si analog circuit applications.

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[1] Decoutere, S., Vleugels, F., Kuhn, R., Loo, R., Caymax, M., Jenei, S., Croon, J., Huylenbroeck, S. Van, Rold, M. Da, Rosseel, E., and Coppens, P., Tech. Dig. BCTM 106 (2000).
[2] Kar-Roy, A., Hu, C., Racanelli, M., Compton, C.A., Kempf, P., Jolly, G., Sherman, P. N., Zheng, J., Zhang, Z., and Yin, A., Tech. Dig. IITC 245 (1999).
[3] Zurcher, P., Alluri, P., Chu, P., Duvallet, P., Happ, C., Henderson, R., Mendonca, J., Kim, M., Petras, M., Raymond, M., Remmel, T., Roberts, D., Steimle, B., Stipanuk, J., Straub, S., Sparks, T., Tarabbia, M., Thibieroz, H., and Miller, M., Tech. Dig. IEDM 153 (2000).
[4] Babcock, J. A., Balster, S. G., Pinto, A., Dirnecker, C., Steinmann, P., Jumpertz, R., and Kareh, B. El-, IEEE Electron Device Lett. 22, 230 (2001).
[5] Wilk, G. D., Wallace, R. M., Anthony, J. M., J. Appl. Phys. 89, 5243 (2001).
[6] Chrisey, D. B. and Hubler, G. K., Pulsed Laser Deposition of Thin Films (Wiley, New York, 1994).
[7] Léger, J. M., Haines, J., and Blanzat, B., J. Mater. Sci. Lett. 13, 1688 (1994).
[8] Léger, J.M., Atouf, A., Tomaszewski, P. E., and Pereira, A. S., Phys. Rev. B 48, 93 (1993).
[9] Vickerman, J. C., Secondary Ion Mass Spectrometry: Principles and Applications (Clarendon, Oxford, 1989).
[10] Chaneliere, C., Autran, J. L., Devine, R. A. B., and Balland, B., Materials Science and Engineering R22. 269 (1998).
[11] Blonkowski, S., Regache, M., and Halimaoui, A., J. Appl. Phys. 90, 1501 (2001).

Material and Electrical Characterization of HfO2 Films for MIM Capacitors Application

  • Hang Hu (a1), Chunxiang Zhu (a1), Y. F. Lu (a1), Y. H. Wu (a1), T. Liew (a1), M. F. Li (a1), B.J. Cho (a1), W. K. Choi (a1) and N. Yakovlev (a2)...

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