Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-23T06:45:07.076Z Has data issue: false hasContentIssue false
  • English
  • Français

Mass Transport Effects In Selectively Deposited Diamond Thin Films

Published online by Cambridge University Press:  10 February 2011

Michael C. Kwan  and
Karen K. Gleason
Michael C. Kwan
Affiliation:
Massachusetts Institute of Technology, Department of Chemical Engineering, 66-468, Cambridge, MA, 02139
Karen K. Gleason
Affiliation:
Massachusetts Institute of Technology, Department of Chemical Engineering, 66-468, Cambridge, MA, 02139
Get access

Abstract

In order to study the effects of gas phase transport on the growth of hot-filament chemical vapor deposited (HFCVD) diamond, crystallites were selectively grown on a pre-nucleated, oxygen plasma patterned silicon wafer. Growth rate differences across the substrate were observed from scanning electron micrographs. The deposition system was then modeled with a three dimensional finite difference scheme that employed gas phase diffusion of a single growth limiting species from the hot filament to the surface coupled with a first order surface reaction. The variations in the predicted gas phase concentration directly above the surface were adjusted to match the observed growth rate differences through the Dahmk6hler number which was then used to calculate a first order surface reaction coefficient. This value was compared to published reaction coefficients for the abstraction of a surface H-atom by a gas-phase H-atom.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 25
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Frenklach, M., and Wang, H., Phys. Rev. B, 43 (2), 1520 (1991).Google Scholar
2. Butler, J. E., and Woodin, R. L., Phil. Trans. R. Soc. Lond. A, 342, 209 (1993).Google Scholar
3. Harris, S. J., J. Appl. Phys., 56, 2298 (1990).Google Scholar
4. Frenklach, M., and Spear, K. E., J. Mater. Res., 3 (1), 133 (1988).Google Scholar
5. Goodwin, D. G., and Gavillet, G. G., J. Appl. Phys., 68 (12), 6393 (1990).Google Scholar
6. Connell, L. L., Fleming, J. W., Chu, H.–N., Vestyck, D. J. Jr., Jensen, E., and Butler, J. E., J. Appl. Phys., 78 (6), 3622 (1995).Google Scholar
7. Koleske, D. D., Gates, S. M., Thoms, B. D., Russell, J. J. N., and Butler, J. E., J. Chem. Phys., 102 (2), 992 (1995).Google Scholar
8. Krasnoperov, L. N.,. Kalinovski, I.J., Chu, H.–N., and Gutman, D., J. Phys. Chem., 97, 11787 (1993).Google Scholar
9. Colas, E., Caneau, C., Frei, M., Clausen, E. M. Jr., Quinn, W. E., and Kim, M. S., Appl. Phys. Lett., 59 (16), 2019 (1991).Google Scholar
10. Meier, U., Kohse-Höinghaus, K., Schäfer, L., and Klages, C.–P., Appl. Opt., 29 (33), 4993 (1990).Google Scholar
11. Bird, R. B., Stewart, W. E., and Lightfoot, E. N., Transport Phenomena (John Wiley & Sons, New York. 1960), p. 511.Google Scholar