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Manipulation of amorphous Ge2Sb2Te5 nano-structures in isolated and crystalline environment.

  • A. M. Mio (a1), G. D’Arrigo (a2), E. Carria (a1) (a3), C. Bongiorno (a2), S. Rossini (a4), C. Spinella (a2), M. G. Grimaldi (a1) (a3) and E. Rimini (a2)...

Abstract

We have investigated the stability of nano-amorphous region of Ge2Sb2Te5 (GST), fabricated by Electron Beam Lithography (EBL), dry etching, and ion implantation. Nano-structures, less than 100 nm in diameter and 20 nm thick, were either embedded in a crystalline environment or just isolated. We have observed nano-structure crystallization by in situ Transmission Electron Microscopy (TEM) in the 75°C-150°C temperature range. Re-crystallization of amorphous dots embedded in a crystalline region (either in the cubic or hexagonal phase) occurs by the movement of the interface at relatively low temperature (about 90°C). Instead, in the isolated structures the transition occurs at about 145°C by nucleation and growth. These results might be of relevance for the data retention of sub-50nm devices. Indeed, the more stable amorphous phase in self-standing regions indicates the better retention properties of isolated cells with respect to the traditional mushroom cell configuration.

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