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Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications

Published online by Cambridge University Press:  01 February 2011

C. Bonafos ,
N. Cherkashin ,
M. Carrada ,
H. Coffin ,
G. Ben Assayag ,
S. Schamm ,
P. Dimitrakis ,
P. Normand ,
M. Perego  and
M. Fanciulli
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C. Bonafos
Affiliation:
CEMES-CNRS, 29 rue J. Marvig, 31055, Toulouse, France
N. Cherkashin
Affiliation:
CEMES-CNRS, 29 rue J. Marvig, 31055, Toulouse, France Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St Petersburg, 194021, Russia
M. Carrada
Affiliation:
CEMES-CNRS, 29 rue J. Marvig, 31055, Toulouse, France Laboratoire de Physique des Solides, 118 route de Narbonne, 31062 Toulouse cedex 4, France
H. Coffin
Affiliation:
CEMES-CNRS, 29 rue J. Marvig, 31055, Toulouse, France
G. Ben Assayag
Affiliation:
CEMES-CNRS, 29 rue J. Marvig, 31055, Toulouse, France
S. Schamm
Affiliation:
CEMES-CNRS, 29 rue J. Marvig, 31055, Toulouse, France
P. Dimitrakis
Affiliation:
Institute of Microelectronics, NCSR ‘Demokritos', 15310 Aghia Praskevi, Greece
P. Normand
Affiliation:
Institute of Microelectronics, NCSR ‘Demokritos', 15310 Aghia Praskevi, Greece
M. Perego
Affiliation:
Laboratorio MDM - INFM Agrate-Italy.
M. Fanciulli
Affiliation:
Laboratorio MDM - INFM Agrate-Italy.
T. Muller
Affiliation:
FZR, PO Box 510119, 01314 Dresden, Germany
K. H. Heinig
Affiliation:
FZR, PO Box 510119, 01314 Dresden, Germany
A. Argawal
Affiliation:
A. Argawal Axcelis Technologies Inc., 55 Cherry Hill Drive, Beverly, MA 01915, USA
A. Claverie
Affiliation:
CEMES-CNRS, 29 rue J. Marvig, 31055, Toulouse, France
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Abstract

In silicon nanocrystal (nc) based metal-oxide-semiconductor (MOS) memory structures a fine control of the Si nc location in the gate oxide is required for the pinpointing of optimal device architectures. In this work, we show how to manipulate and control the depth-position, size and surface density of two dimensional (2D) arrays of Si ncs embedded in thin (<10 nm) SiO2 layers, fabricated by ultra-low-energy (typically 1 keV) ion implantation and subsequent annealing. Particular emphasis is placed upon the influence of implantation, annealing conditions and oxide thickness on the nanocrystal characteristics (e.g. size, density) and the charge storage properties of associated MOS structures. Structural investigation is performed by using specific characterization methods including Fresnel imaging for the measurement of the injection distance between the substrate and the nc band, as well as spatially resolved Electron Energy Loss Spectroscopy using the spectrum-imaging mode of a Scanning Transmission Electron Microscope to evaluate the size distribution and density of the ncs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D5.2
Copyright
Copyright © Materials Research Society 2005

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References

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