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Magnetron-Sputtered Metal-Amorphous Silicon Interfaces

  • W. W. Anderson (a1), J. L. Crowley (a1), A. D. Jonath (a1), H. F. Macmillan (a1), W. G. Opyd (a1) and J. A. Thornton (a2)...

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Large-area platinum and palladium Schottky barrier solar cells with diode quality factors approaching unity have been fabricated on magnetron-sputterdeposited hydrogenated amorphous silicon (a-Si:H). Measured optical band gaps and barrier heights are comparable with those obtained on glow-dischargeproduced a-Si:H but open-circuit voltages are lower. High surface defect densities are suggested to be responsible for the decrease in Voc .

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1 Tomlin, S. G., Br. J. Appl. Phys. (J. Phys. D), 1 (1968) 1667.
2 Thompson, M. J., Johnson, N. M., Nemanich, R. J. and Tsai, C. C., Appl. Phys. Lett., 39 (1981) 274.
3 Sze, S. M., Physics of Semiconductor Devices, Wiley-Interscience, New York, 1969, Chap. 8.
4 Thornton, J. and Hoffman, D., J. Vac. Sci. Technol., 18 (1981) 203.
5 Wronski, C. R. and Carlson, D. E., in Spear, W. E. (ed.), Amorphous and Liquid Semiconductors, Proc. 7th Int. Conf. on Amorphous and Liquid Semiconductors, 1977, University of Edinburgh, Edinburgh, 1977, p. 453.
6 Morel, D. L. and Moustakas, T. D., Appl. Phys. Lett., 39 (1981) 612.

Magnetron-Sputtered Metal-Amorphous Silicon Interfaces

  • W. W. Anderson (a1), J. L. Crowley (a1), A. D. Jonath (a1), H. F. Macmillan (a1), W. G. Opyd (a1) and J. A. Thornton (a2)...

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