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Magnetic Resonance Studies of GaN-Based Single- Quantum Well LEDs

  • W. E. Carlos (a1), E. R. Glaser (a1), T. A. Kennedy (a1) and Shuji Nakamura (a2)


We report electrically-detected magnetic resonance (EDMR) and electroluminescence-detected magnetic resonance (ELDMR) results on InGaN/AJGaN single-quantum-well light emitting diodes. The dominant feature detected by either technique is a broad resonance (ΔB ≈ 13 mT) at g ≈ 2.01 which is enhanced by high current stressing. Our ELDMR measurements show that, depending on bias, this defect is predominately associated with either an increase or a decrease in electroluminescence at resonance while our EDMR measurements show that this resonance is associated with an increase in current at resonance before stressing and a decrease after stressing. We suggest that this is associated with a nonradiative recombination path, in parallel with the radiative recombination path and with recombination in the depletion region of a contact. A second resonance, more prominent before stressing, with g ≈ 1.99 and ΔB ∽ 7 mT is very similar to the deep donor trap, previously observed in double heterostructure diodes and is associated with a decrease in both the current and electroluminescence at resonance.



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1. For reviews of work in the Group III nitrides see; Davis, R.F., Proc. IEEE 79, 702 (1991); S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992); H. Morkoç, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov and M. Burns, J. Appl. Phys. 76, 1363 (1994).
2. Amano, >H., Sawaki, N., Akasaki, I. and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986); H. Amano, M. Kitoh, K. Hiramatsu and I. Akasaki, J. Electochem. Soc. 137, 1639 (1990); S. Nakamura, M. Senoh and T. Mukai, Jpn. J. Appl. Phys. 30, L1708 (1991).
3. Nakamura, Shuji, Mukai, Takashi and Senoh, Masayuki, Jpn. J. Appl. Phys. 30, L1998 (1991).
4. Nakamura, Shuji, Mukai, Takashi and Senoh, Masayuki, Appl. Phys. Lett. 64, 1687 (1994).
5. Nakamura, Shuji, Senoh, Masayuki, Iwasa, Naruhito and Nagahama, Shin-ichi,Jpn. J. Appl. Phys. 34, 797 (1995); Appl. Phys. Lett. 67, 1868 (1995).
6. Nakamura, Shuji, Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Jpn. J. Appl. Phys.. 35, L74 (1996); Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto, and Hiroyuki Kiyoku, Appl. Phys. Lett. 69, 3034 (1996).
7. For a review of recent optical and magnetic resonance results see; Kaufmann, U., Kunzer, M., Merz, C., Akasaki, I. and Amano, H., Gallium Nitride and Related Materials, ed. by Ponce, F.A., Dupuis, R.D., Nakamura, S. and Edmond, J.A. (Materials Research Society, Pittsburgh, 1996), p. 633.
8. Carlos, W.E., Freitas, J.A. Jr., Asif Khan, M., Olson, D.T. and Kuznia, J.N., Phys. Rev. B48, 17878 (1993).
9. Glaser, E.R., Kennedy, T.A., Doverspike, K., Rowland, L.B., Gaskill, D.K., Freitas, J.A. Jr., Asif Khan, M., Olson, D.T., Kuznia, J.N., and Wickenden, D.K., Phys. Rev. B51, 13326 (1995).
10. Kunzer, M., Kaufmann, U., Maier, K., Schneider, J., Herres, N., Akasaki, I., and Amano, H., Mat. Sci. Forum 143–147, 87 (1994); K. Maier, M. Kunzer, U. Kaufmann, J. Schneider, B. Monemar, I. Akaski and H. Amano, Mat. Sci. Forum 143–147, 93 (1994).
11. Hofmann, D.H., Kovalev, D., Steude, G., Meyer, B. K., Hoffmann, >A., Eckey, L., Heitz, R., Detchprom, T., Amano, H. and Akasaki, I., Phys. Rev. B52, 16702 (1995).
12. Ramsteiner, M., Menniger, J., Brandt, O., Yang, H. and Ploog, K.H., Appl. Phys. Lett. 69, 1276 (1996).
13. Swanson, L.S., Shinar, J., Brown, A.R., Bradley, D.D.C., Friend, R.H., Burn, P.L., Kraft, A. and Holmes, A.B., Phys. Rev. B46, 15072 (1992).
14. Homewood, K.P., Cavenett, B.C., Austin, I.G., Searle, T.M., Spear, W.E. and Lecomber, P.G. J. Phys. C17, L103 (1984).
15. Lepiné, D.J., Phys. Rev. B6,436 (1972); I. Solomon, Solid State Commun. 20, 215 (1976); F.C. Rong, G.J. Gerardi, W.R. Buchwald, E.H. Poindexter, M.T. Umlor, D.J. Keeble and W.L. Warren, Appl. Phys. Lett. 60, 610 (1992); B. Stich, S. Greulich-Weber and J.-M. Spaeth, J. Appl. Phys. 77, 1546 (1995).
16. Reinacher, N.M., Brandt, M.S. and Stutzmann, M., Materials Science Forum 196–201, 1915 (1995).
17. Carlos, W.E., Glaser, E.R., Kennedy, T.A. and Nakamura, S., Appl. Phys. Lett. 67, 2376 (1995); Materials Science Forum 196–201, 25 (1995); J. Electron. Mater. 25, 851 (1996).
18. Carlos, W.E., Glaser, E.R., Kennedy, T.A. and Nakamura, S., in The Physics of Semiconductors, ed. by Scheffler, M. and Zimmermann, R. (World Scientific, Singapore, 1996) p. 2921.
19. Lips, Klaus and Fuhs, Walter, J. Appl. Phys. 74, 3993 (1993).
20. Götz, W., Johnson, N.M., Amano, H. and Akasaki, I., Appl. Phys. Lett. 65, 463 (1994); W. Götz, N.M. Johnson, R.A. Street, H. Amano and I. Akasaki, Appl. Phys. Lett. 66,1340 (1995).
21. Glaser, E.R., Kennedy, T.A., Wickenden, A.E., Koleske, D.D. and Freitas, J.A. Jr., this conference.
22. Carlos, >W.E., Proceedings of Seventh International Conference on Shallow Level Centers in Semiconductors, ed. by Ammerlaan, C.A.J. and Pajot, B. (World Scientific, Singapore, 1996) in press.
23. Osinski, Marek, Zeller, Joachim, Per-Chih Chiu, B. Phillips, Scott and Barton, Daniel L., Appl. Phys. Lett. 69, 898 (1996).
24. Stich, S., Greulich-Weber, S. and Spaeth, J.-M., Appl. Phys. Lett. 68, 1102 (1996).
25. Denninger, G., Beerhalter, R., Reiser, D., Maier, K., Schneider, J., Detchprohm, T., Hiramatsu, K., Solid State Commun. 99, 347 (1996); F.K. Koshnick, K. Michael, J.-M. Spaeth, B. Beumont and P. Gibart, Phys. Rev. B54, 11042 (1996).

Magnetic Resonance Studies of GaN-Based Single- Quantum Well LEDs

  • W. E. Carlos (a1), E. R. Glaser (a1), T. A. Kennedy (a1) and Shuji Nakamura (a2)


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