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Magnetic Resonance in Hydrogenated Nanocrystalline Silicon Thin Films

Published online by Cambridge University Press:  01 February 2011

Tining Su ,
Tong Ju ,
Baojie Yan ,
Jeffrey Yang ,
Subhendu Guha  and
P. Craig Taylor
Tining Su
Affiliation:
tsu@mines.edu, Colorado School of Mines, Department of Physics, 1523 Illinois Street, Golden, CO, 80401, United States
Tong Ju
Affiliation:
jutong@gmail.com, University of Utah, Department of Physics, Salt Lake City, UT, 84112, United States
Baojie Yan
Affiliation:
byan@uni-solar.com, United Solar Ovonic LLC, Troy, MI, 48326, United States
Jeffrey Yang
Affiliation:
jyang@uni-solar.com, United Solar Ovonic LLC, Troy, MI, 48326, United States
Subhendu Guha
Affiliation:
sguha@uni-solar.com, United Solar Ovonic LLC, Troy, MI, 48326, United States
P. Craig Taylor
Affiliation:
pctaylor@mines.edu, Colorado School of Mines, Department of Physics, Golden, CO, 80401, United States
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Abstract

We have investigated the localized electronic states in mixed-phase hydrogenated nanocrystalline silicon thin films (nc-Si:H) with electron-spin-resonance (ESR). The dark ESR signal most likely arises from defects at the grain boundaries or within the crystallites. With illumination with photon energies ranging from 1.2 eV to 2.0 eV, there is no evidence of photo-induced carriers trapped in the bandtail states within the amorphous region. Dependence of the light-induced ESR (LESR) upon the exciting photon energy reveals that, at different excitation photon energies, different regions dominate the optical absorption. This behavior may have potential consequences for understanding the light-induced degradation in nc-Si:H.

Keywords

electron spin resonancedefectsthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A11-01
Copyright
Copyright © Materials Research Society 2008

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References

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