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Magnetic properties of Mn-doped GaN, InGaN, and AlGaN

  • M. L. Reed (a1), E. A. Berkman (a2), M. J. Reed (a2), F. E. Arkun (a2), T. Chikyow (a3), S. M. Bedair (a1), J. M. Zavada (a4) and N. A. El-Masry (a2)...

Abstract

We report on the growth and magnetic properties of single crystal Mn-doped GaN, InGaN, and AlGaN films. The III-Nitride films were grown by MOCVD, while the Mn doping was performed by solid-state diffusion of a surface Mn layer deposited by pulsed laser ablation. Mn-doped In x Ga1-x N films were grown with x < 0.15, where the easy axis of magnetization rotates from in-plane to out-of-plane by changing the In x Ga1-x N thickness/strain-state of the film from compressively strained to relaxed. Mn-doped Al x Ga1-x N films were grown with x < 0.40 showing ferromagnetic behavior above room temperature. SQUID measurements ruled out superparamagnetism within these films. By optimizing the growth and annealing conditions of Mn-doped III-Nitrides, we have achieved Curie temperatures in the range of 228 to 500K. These ferromagnetic Mn-doped III-Nitride films exhibit hysteresis with a coercivity of 100–500 Oe. TEM analysis showed no secondary phases within these films.

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Magnetic properties of Mn-doped GaN, InGaN, and AlGaN

  • M. L. Reed (a1), E. A. Berkman (a2), M. J. Reed (a2), F. E. Arkun (a2), T. Chikyow (a3), S. M. Bedair (a1), J. M. Zavada (a4) and N. A. El-Masry (a2)...

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