The effect of in-plane strain on the magnetic anisotropy of -oriented epitaxial TbFe2 films was studied. DC magnetron cosputtering was used to grow epitaxial TbFe2(110) films on A12O3(1120) substrates with an epitaxial Nb(110) buffer layer. Torque magnetometry showed that the films had uniaxial anisotropy, and the torque curves were used to determine the magnetic anisotropy constants of the films by analyzing the rotational hysteresis loss. Film strain was measured using synchrotron radiation. The film strain and anisotropy measurements confirm that the uniaxial anisotropy results from tensile strain in the TbFe2(110) films. This agrees with theoretical calculations of magnetic anisotropy which show that tensile strains can induce a uniaxial anisotropy in TbFe2(110) films.