Hydrogenated nanocrystalline silicon (nc-Si:H) films with room temperature luminescence have been prepared in a PECVD system. Heavily H2 diluted silane and large negative bias accompanying low deposition temperature are used to decrease the crystalline size. The films comprise nanocrystallites surrounded by an interfacial phase with wurtzite structure characterized by 495cm−1 feature in the Raman spectrum. The X-ray diffraction spectrum shows the average grain size is about 4-5nm. The room temperature photoluminescence (PL) spectrum consists of two peaks, one at 2.21eV which may be induced by the transitions of the quantum subbands in the nanocrystalline phase, the other at 2.84eV which may be attributed to some kinds of localized centers in the interfacial phase. The photoluminescence excitation (PLE) spectrum also shows two peaks, a low one at 3.4eV approaching the bulk like transitions between Г25'V-Г15c while the high energy envelope around 5.0eV has a complicated configuration, and might be related to both the bulk like transition between Λ3v-Λ3cand band transitions of (Si-H2)n chains.