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Luminescence Study of Wet Chemically Etched InP/InGaAs-Submicron-Structures

Published online by Cambridge University Press:  28 February 2011

B. Jacobs ,
H. Zull ,
A. Forchel ,
I. Gyuro ,
P. Speier  and
E. Zielinski
B. Jacobs
Affiliation:
Technische Physik, Universität Würzburg, Am Hubland, D 8700 Würzburg
H. Zull
Affiliation:
Technische Physik, Universität Würzburg, Am Hubland, D 8700 Würzburg
A. Forchel
Affiliation:
Technische Physik, Universität Würzburg, Am Hubland, D 8700 Würzburg
I. Gyuro
Affiliation:
SEL-Alcatel Research Center, D 7000, Stuttgart
P. Speier
Affiliation:
SEL-Alcatel Research Center, D 7000, Stuttgart
E. Zielinski
Affiliation:
SEL-Alcatel Research Center, D 7000, Stuttgart
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Abstract

We have investigated the optical properties of wet chemically etched InP/InGaAs-wires and dots with widths between 100 nm and 10 μm for different excitation densities. We observe that the non radiative recombination centers at the etched sidewalls can be saturated already at moderate excitation densities about 100 W/cm2. Avoiding saturation effects we obtain a surprisingly large sidewall recombination velocity of 107 cm/sec at 77 K. The comparison of wire and box structures shows that there is no significant difference in the quantum efficiency of both types of structures down to a geometrical size of 160 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 821
Copyright
Copyright © Materials Research Society 1993

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References

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