Skip to main content Accessibility help
×
Home

Luminescence Properties of Yb-Doped Inp

  • H. J. Lozykowski (a1), A. K. Alshawa (a1), G. Pomrenke (a2) and I. Brown (a3)

Abstract

The photoluminescence, time resolved spectra and kinetics of Yb implanted InP samples are studied under pulsed and CW excitations (above and below band-gap) at different temperatures and excitation intensity. The photoluminescence intensity and decay time as a function of temperature is explained by a proposed new quenching mechanism involving Fe ion. The rise and decay times depend on excitation intensity. The above experimental facts was explained using the kinetics model developed by H.J. Lozykowski [2]. The numerically simulated luminescence rise and decay times show a good quantitative agreement with experiment, over a wide range of generation rates. The electric field InP:Yb photoluminescence quenching was investigated and reported for the first time.

Copyright

References

Hide All
[1] Robbins, D. J. and Dean, P. J., Adv. in Physics, 27 (4), 499, (1978) and references
[2] Lozykowski, H.J., Phys Rev. (in press)
[3] Wagner, J., Windscheif, J., and Ennen, H., Phys.Rev.B, 30, 6230, (1984)
[4] Witney, P. S., Uwai, K., Nakagome, H., and Takahei, K., Appl. Phys. Lett.,21, 2074,(1988)
[5a] Seghier, D., Benyattou, T., Bremond, G., Ducroquet, F., Gregoire, I., Guillot, G., Lhomer, C., Lambert, B., Toudic, Y., and Corre, A. Le, Appl. Phys. Lett. 60, 983, (1992),
[5b] Lambert, B., Corre, A. Le, Toudic, Y., Lhomer, C., Grandpierre, G. and Gauneau, M., J. Phys. Condens. Mater 2, 479, (1990).
[6] Holstein, T., Lyo, S. K., and Orbach, R., Excitation in Disorder Systems, in Laser Spectroscopy of Solids, edited by Yen, W. M. and Selzer, P. M., Springer-Verlag, Berlin, 1981, p. 39.
[7] Uwai, K., Nakagome, H., and Takahei, K., Appl. Phys. Let., 50, 977, (1987)
[8] Williams, D.M. and Wessels, B.W. Appl.Phys, Lett., 56,566,(1990)
[9] Bishop, S., Iron Impurity Centers in rn-V Semiconductors in Deep Centers in Semiconductors A State-of-the-Art Approach, Second Edition, Edited by Pantelides, S.T., Gordon and Breach Science Publishers, Philadelphia 1992.
[10] Stauss, G. H, Krebs, I. J., and Henry, R. L., Phys. Rev. B16, 974, (1977)
[11] Bishop, S. G., Klein, P. B., Henry, R. L., and , McCombe, in Rees, G. J. (Editor) Semi-Insulating III-V Materials, (Shiva, Orpington, 1980), p. 161.
[12] Leyral, P., Bremond, G., Nouailhat, A., and Guillot, G., J.of Lum., 24/25, 245, (1981).
[13] Klein, P. B., Furneaux, J. E., and Henry, R. L., Phys. Rev. B29, 1947, (1984).
[14] Borcherds, P. H., Alfrey, G. F., Saunderson, D. H., and Woods, A. D. B., J. Phys. C : Solid State Phys., 8, 2022, (1975).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed