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Luminescence Properties of New Donors in CZ-Silicon

Published online by Cambridge University Press:  28 February 2011

Ph. Vendage ,
N. Magnea  and
K. Saminadayar
Ph. Vendage
Affiliation:
Centre d'Etudes Nucléaires de Grenoble. DRF/SPh/PSC. 85 X -38041 Grenoble Cédex
N. Magnea
Affiliation:
Centre d'Etudes Nucléaires de Grenoble. DRF/SPh/PSC. 85 X -38041 Grenoble Cédex
K. Saminadayar
Affiliation:
Centre d'Etudes Nucléaires de Grenoble. DRF/SPh/PSC. 85 X -38041 Grenoble Cédex
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Abstract

We report the observation of a new shallow donor center detected in CZ Silicon annealed at 600°C, by EPR and luminescence experiments. The binding energy varies between 30 meV and 17 meV with the annealing time, showing the presence of several centers. The creation rate of these new defects is favoured in carbon rich material. This series of defects is probably one of the components of the New Donors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 187
Copyright
Copyright © Materials Research Society 1986

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References

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