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Luminescence Properties of Eu ion-implanted GaN

Published online by Cambridge University Press:  01 February 2011

Shin-ichiro Uekusa  and
Isao Tanaka
Shin-ichiro Uekusa
Affiliation:
Department of Electrical and Electronic Engineering, Meiji University, 1–1–1 Higashi-mita, Tama-ku, Kawasaki, Kanagawa, 214–8571, Japan
Isao Tanaka
Affiliation:
Department of Electrical and Electronic Engineering, Meiji University, 1–1–1 Higashi-mita, Tama-ku, Kawasaki, Kanagawa, 214–8571, Japan
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Abstract

The Eu ion was implanted at an energy of 300keV with a dose of 1×1015cm-2 at room temperature. Photoluminescence (PL) and PL lifetime were characterized and studied on thermal quenching process. We calculated the activation energy (E1) of temperature dependent PL and the value of E1 was 5.68meV. E1 was affected the luminescence intensity in the temperature range from 15K to 70K. The activation energy (Ea) of PL lifetime was calculated and the value of Ea was 8.5meV. The non-radiative recombination in the transition from the 5D0 to 7F2 of Eu was dominated in the temperature range from 15K to 100K. We found that the thermal quenching occurred in both the electron emission from RE-trap and the non-radiative recombination in the transition on Eu in the temperature range from 15K to 70K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.7
Copyright
Copyright © Materials Research Society 2004

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References

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