- Cited by 18
Yoshida, Seikoh Itoh, Yoshiteru and Kikawa, Junjiroh 2000. Nitride-Rich Hexagonal GaNP Growth Using Metalorganic Chemical Vapor Deposition. MRS Proceedings, Vol. 639, Issue. ,
Skromme, B.J. Martinez, G.L. Krasnobaev, L. and Poker, D.B. 2000. Characterization of Ion Implanted GaN. MRS Proceedings, Vol. 639, Issue. ,
Kikawa, J. Yoshida, S. and Itoh, Y. 2001. Electroluminescence Studies of Nitride-Rich GaN1?xPx SQW Structure Grown by Laser-Assisted Metal-Organic Chemical Vapor Deposition. physica status solidi (a), Vol. 188, Issue. 1, p. 159.
Kikawa, Junjiroh Yoshida, Seikoh and Itoh, Yoshiteru 2001. Electroluminescence And Photoluminescence Studies Of A Nitride-Rich GaN1-XPx SQW Structure LED Grown By Laser-Assisted Metal-Organic Chemical Vapor Deposition. MRS Proceedings, Vol. 693, Issue. ,
Gil, Bernard Morel, Aurélien Taliercio, Thierry Lefebvre, Pierre Foxon, C. T. Harrison, I. Winser, A. J. and Novikov, S. V. 2001. Carrier relaxation dynamics for As defects in GaN. Applied Physics Letters, Vol. 79, Issue. 1, p. 69.
Kikawa, Junjiroh Yoshida, Seikoh and Itoh, Yoshiteru 2001. Hexagonal GaN1−xPx growth by laser-assisted metalorganic chemical vapor deposition. Journal of Crystal Growth, Vol. 229, Issue. 1-4, p. 48.
Yoshida, Seikoh Kikawa, Junjiroh and Itoh, Yoshiteru 2002. Crystal growth of nitride-rich GaNP by laser-assisted metalorganic chemical-vapor deposition. Journal of Crystal Growth, Vol. 237-239, Issue. , p. 1037.
Zhang, L Tang, H.F Schieke, J Mavrikakis, M and Kuech, T.F 2002. Influence of Bi impurity as a surfactant during the growth of GaN by metalorganic vapor phase epitaxy. Journal of Crystal Growth, Vol. 242, Issue. 3-4, p. 302.
Lee, L. Lee, W. C. Chung, H. M. Lee, M. C. Chen, W. H. Chen, W. K. and Lee, H. Y. 2002. Characteristics of deep levels in As-implanted GaN films. Applied Physics Letters, Vol. 81, Issue. 10, p. 1812.
Huang, H. Y. Chuang, C. H. Shu, C. K. Pan, Y. C. Lee, W. H. Chen, W. K. Chen, W. H. and Lee, M. C. 2002. Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence. Applied Physics Letters, Vol. 80, Issue. 18, p. 3349.
Kikawa, J. Yoshida, S. and Itoh, Y. 2002. The Properties of a P-Implanted GaN Light-Emitting Diode. MRS Proceedings, Vol. 743, Issue. ,
Chen, L. and Skromme, B. J. 2002. Spectroscopic Characterization of Ion-Implanted GaN. MRS Proceedings, Vol. 743, Issue. ,
Zhang, L. Tang, H. F. Schieke, J. Mavrikakis, M. and Kuech, T. F. 2002. The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy. Journal of Applied Physics, Vol. 92, Issue. 5, p. 2304.
Kikawa, Junjiroh Yoshida, Seikoh and Itoh, Yoshiteru 2003. Electroluminescence studies under forward and reverse bias conditions of a nitride-rich GaN1−xPx SQW structure LED grown by laser-assisted metal-organic chemical vapor deposition. Solid-State Electronics, Vol. 47, Issue. 3, p. 523.
Tsuda, Yuhzoh Mouri, Hirokazu Yuasa, Takayuki and Taneya, Mototaka 2004. Structural and optical properties of GaN[sub 1−x]As[sub x] grown by metalorganic chemical vapor deposition. Applied Physics Letters, Vol. 85, Issue. 19, p. 4361.
Reshchikov, Michael A. and Morkoç, Hadis 2005. Luminescence properties of defects in GaN. Journal of Applied Physics, Vol. 97, Issue. 6, p. 061301.
Lozykowski, H. J. and Jadwisienczak, W. M. 2007. Thermal quenching of luminescence and isovalent trap model for rare-earth-ion-doped AlN. physica status solidi (b), Vol. 244, Issue. 6, p. 2109.
Wellenius, Patrick Suresh, Arun and Muth, John F. 2008. An Amorphous IGZO Rare Earth Doped Luminescent Phosphor. MRS Proceedings, Vol. 1111, Issue. ,
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Photoluminescence spectra of high quality GaN epilayers, grown by MOCVD on sapphire substrates and implanted by isoelectronic ions: As, P, and Bi, were investigated. Post implant annealing was done at temperatures of up to 1150 °C, in a tube furnace under flowing NH3 or N2, and in a rapid thermal annealing system in ambient of N2. The PL of GaN: P annealed at 1150 °C in NH 3 exhibited strong pair-type modulated structures on the short wavelength shoulder of an emission band.The band at 2.914 eV is due to the recombination of bound exciton to P-hole isoelectronic traps (P-BE), and the modulated structure results from electron-hole recombination at pairs of neutral donors and a hole on P isoelectronic traps. The PL of GaN: As, GaN: Bi showed an emission with peaks at 2.597 eV and 3.241 eV, due to the recombination of an exciton bond to As and Bi isoelectronic-hole traps. We also studied thermal quenching excitation spectra, and PL kinetics. The experimental results are discussed using a simple spherical potential-well model for isoelectronic traps: As, P, and Bi replacing nitrogen in GaN.
Hide All Baldereschi, A. 1973 J. of Lumin. 7 79 Dean, P. J. 1973 J. of Lumin. 7 51 Pancove, J.I. and Hutchby, J.A. 1976 J.Appl. Phys. 47 5387 Metcalfe, R.D., Wickenden, D. and Clark, W.C 1978 J. of Lumin. 16 405–15 Jadwisienczak, W.M. and Lozykowski, H.J., Proc. of IEEE/LEOS, 24th ISCS, San Diego, 1997,(in print). Dean, J., Cuthbert, J.D., and Lynch, R.T. 1969 Phys.Rev. V.179 754 Roessler, D.M. 1970 J. Appl. Phys. 41 4589–4604 Meyer, B.K., Volum, D., Graber, A., Alt, H.C., Detchprohm, T., Amano, A., and Akasaki, I. 1975 Solid State Communications 95 597 Goede, O., Heimbrodt, W., and Muller, R. 1981 phys. stat. sol.(b) 105 543–550
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