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Luminescence Decay of the 1.54 μm Emission from Erbium in Silicon

Published online by Cambridge University Press:  10 February 2011

J. Hartung ,
J. H. Evans ,
P. Dawson ,
A. P. Sciioles ,
T. Taskin ,
M. Q. Huda ,
C. Jeynes  and
A. R. Peaker
J. Hartung
Affiliation:
Centre for Electronic Materials and Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, PO Box 88, Manchester M601QD, UK, CEM@UMIST.AC.UK
J. H. Evans
Affiliation:
Centre for Electronic Materials and Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, PO Box 88, Manchester M601QD, UK, CEM@UMIST.AC.UK
P. Dawson
Affiliation:
Centre for Electronic Materials and Department of Physics, University of Manchester Institute of Science and Technology, PO Box 88, Manchester M60 1QD, UK
A. P. Sciioles
Affiliation:
Centre for Electronic Materials and Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, PO Box 88, Manchester M601QD, UK, CEM@UMIST.AC.UK
T. Taskin
Affiliation:
Centre for Electronic Materials and Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, PO Box 88, Manchester M601QD, UK, CEM@UMIST.AC.UK
M. Q. Huda
Affiliation:
Centre for Electronic Materials and Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, PO Box 88, Manchester M601QD, UK, CEM@UMIST.AC.UK
C. Jeynes
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, UK
A. R. Peaker
Affiliation:
Centre for Electronic Materials and Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, PO Box 88, Manchester M601QD, UK, CEM@UMIST.AC.UK
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Abstract

Photoluminescence of silicon implanted with erbium and oxygen was measured in the time domain focussing on the temperature and excitation density dependence of the intra-4f-shell emission from Er3+. The decay of this luminescence is similar for the different optically active crystal field split Er-centres. At low temperatures the luminescence transients consist of a fast initial non-exponential component followed by slower exponential behaviour. An increase in excitation density results in a higher proportion of the luminescence decaying with the faster decay time. Our results indicate a relation of the fast component to nonradiative processes. Auger recombination is proposed as a possible mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 119
Copyright
Copyright © Materials Research Society 1996

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