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LPE Growth of Mixed Composition HI-V “Virtual Substrates” for MID-Infrared Optoelectronic Devices

  • Y. Mao (a1) and A. Krier (a1)

Abstract

Liquid phase epitaxy can be effectively used to grow a thick graded ternary or quaternary buffer layer to provide a “virtual substrate” for subsequent device epitaxy. Grading characteristics of InGaAs, InAsSb and InAsSbP epitaxial layers grown by LPE are discussed. The effects of the principal LPE growth parameters on epiiayer thickness, surface morphology and composition, lattice-mismatch and photoluminescence efficiency were investigated and are described.

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