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Low-voltage Avalanche Breakdown in AlGaN Multi-quantum Wells

Published online by Cambridge University Press:  01 February 2011

Shengkun Zhang
Affiliation:
skzhang@sci.ccny.cuny.edu, City College of New York, Physics, 160 Convent Avenue, New York, NY, 10031, United States
X. Zhou
Affiliation:
xzhou@sci.ccny.cuny.edu, City College of New York, Physics Department, 160 Convent Avenue, New York, NY, 10031, United States
Wubao Wang
Affiliation:
wwang@sci.ccny.cuny.edu, City College of New York, Physics Department, 160 Convent Avenue, New York, NY, 10031, United States
R. R. Alfano
Affiliation:
alfano@sci.ccny.cuny.edu, City College of New York, Physics Department, 160 Convent Avenue, New York, NY, 10031, United States
A. M. Dabiran
Affiliation:
dabiran@svta.com, SVT Associates, Inc., Eden Prairie, MN, 55344, United States
A. Osinky
Affiliation:
Osinky@svta.com, SVT Associates, Inc., Eden Prairie, MN, 55344, United States
A. M. Wowchak
Affiliation:
Wowchak@svta.com, SVT Associates, Inc., Eden Prairie, MN, 55344, United States
B. Hertog
Affiliation:
Hertog@svta.com, SVT Associates, Inc., Eden Prairie, MN, 55344, United States
C. Plaut
Affiliation:
Plaut@svta.com, SVT Associates, Inc., Eden Prairie, MN, 55344, United States
P. P. Chow
Affiliation:
Chow@svta.com, SVT Associates, Inc., Eden Prairie, MN, 55344, United States
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Abstract

In this work, electro-luminescence (EL) of a AlGaN p-i-n diode have been investigated in both avalanche and injection modes. The active i-region of the diode consists of Al0.1Ga0.9N/Al0.15Ga0.85N MQWs. Strong interband luminescence from the Al0.1Ga0.9N active layers was observed when operating the device in both avalanche and injection modes. The threshold voltage for avalanche breakdown is as low as 9 V. This indicates that the impact ionization coefficient of electrons is greatly enhanced in these Al0.1Ga0.9N/Al0.15Ga0.85N MQWs comparing to AlGaN bulk materials. Polarization-induced electric fields in the Al0.1Ga0.9N well layers are believed to be responsible for the enhancement of the ionization coefficient. In a control sample that has higher defect density, the electroluminescence was dominated by long-wavelength emissions, which results from impact ionizations of the defect levels.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. McIntosh, K. A., Molnar, R. J., Mahoney, L. J., Molvar, K. M., Efremow, N., Jr., and Verghese, S., Appl. Phys. Lett. 76, 3938 (2000).Google Scholar
2. Carrano, J. C., Lambert, D. J. H., Eiting, C. J., Collins, C. J., Li, T., Wang, S., Yang, B., Beck, A. L., Dupuis, R. D., and Campbell, J. C., Appl. Phys. Lett. 76, 924 (2000).Google Scholar
3. McIntosh, K. A., Molnar, R. J., Mahoney, L. J., Lightfoot, A., Geis, M. W., Molvar, K. M., Melngailis, I., Aggarwal, R. L., Goodhue, W. D., Choi, S. S., Spears, D. L., and Verghese, S., Appl. Phys. Lett. 75, 3485 (1999).Google Scholar
4. Dmitriev, V. A., Irvine, K. G., Carter, C. H., Jr., Kuznetsov, N. I., and Kalinina, E. V., Appl. Phys. Lett. 68, 229 (1996).Google Scholar