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Low-Temperature, Solid-Phase Epitaxial Growth of Amorphized, Non-Stoichiometric GaAs

Published online by Cambridge University Press:  26 February 2011

K. B. Belay ,
D. L. Llewellyn  and
M. C. Ridgway
K. B. Belay
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australia
D. L. Llewellyn
Affiliation:
Electron Microscopy Unit, Research School of Biological Sciences, Australian National University, Canberra, Australia
M. C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australia
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Abstract

Non-stoichiometric GaAs layers with semi-insulating properties can be produced by low-temperature molecular beam epitaxy or ion implantation. The latter is the subject of the present report wherein the solid-phase epitaxial growth of amorphized, non-stoichiometric GaAs layers has been investigated with time-resolved reflectivity, Rutherford backscattering spectrometry and transmission electron microscopy. GaAs substrates were implanted with Ga and/or As ions and annealed in air at a temperature of 260°C. The recrystallized material was composed of a thin, crystalline layer bordered by a thick, twinned layer. Non-stoichiometry results in a roughening of the amorphous/crystalline interface and the transformation from planar to non-planar regrowth. The onset of the transformation and the rate thereof can increase with an increase in non-stoichiometry. Non-stoichiometry can be achieved on a macroscopic scale via Ga or As implants or on a microscopic scale via Ga and As implants. The influence of the latter is greatest at low doses whilst the former dominates at high doses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 201
Copyright
Copyright © Materials Research Society 1995

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References

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