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Low-temperature operation of diamond surface-channel field-effect transistors

  • Minoru Tachiki (a1), Hiroaki Ishizaka (a1), Tokishige Banno (a1), Toshikatsu Sakai (a1), Kwang-Soup Song (a1), Hitoshi Umezawa (a1) and Hiroshi Kawarada (a1)...

Abstract

Cryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF2 as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.

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